%0 Journal Article
%A Volk, C.
%A Schubert, J.
%A Weis, K.
%A Estévez Hernández, S.
%A Akabori, M.
%A Sladek, K.
%A Hardtdegen, H.
%A Schäpers, T.
%T Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric
%J Applied physics / A
%V 100
%@ 0947-8396
%C Berlin
%I Springer
%M PreJuSER-10462
%P 305 - 308
%D 2010
%Z Record converted from VDB: 12.11.2012
%X We investigated the properties of gadolinium scandate (GdScO3) as a gate dielectric for top-gate electrodes on undoped InAs nanowires. It is demonstrated that due to the high dielectric constant of GdScO3 (k=22), a better control of the conductance of the nanowire is achieved compared to a reference SiO2-isolated back-gate electrode. We analyzed the output and transfer characteristics of top-gate-controlled InAs wires at room temperature and at temperatures down to 4 K. Owing to the good coverage of the InAs nanowire by the 50-nm-thick GdScO3 layer, which was deposited by pulsed-laser deposition, the gate leakage current is sufficiently suppressed.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000279127700044
%R 10.1007/s00339-010-5804-z
%U https://juser.fz-juelich.de/record/10462