TY  - JOUR
AU  - Volk, C.
AU  - Schubert, J.
AU  - Weis, K.
AU  - Estévez Hernández, S.
AU  - Akabori, M.
AU  - Sladek, K.
AU  - Hardtdegen, H.
AU  - Schäpers, T.
TI  - Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric
JO  - Applied physics / A
VL  - 100
SN  - 0947-8396
CY  - Berlin
PB  - Springer
M1  - PreJuSER-10462
SP  - 305 - 308
PY  - 2010
N1  - Record converted from VDB: 12.11.2012
AB  - We investigated the properties of gadolinium scandate (GdScO3) as a gate dielectric for top-gate electrodes on undoped InAs nanowires. It is demonstrated that due to the high dielectric constant of GdScO3 (k=22), a better control of the conductance of the nanowire is achieved compared to a reference SiO2-isolated back-gate electrode. We analyzed the output and transfer characteristics of top-gate-controlled InAs wires at room temperature and at temperatures down to 4 K. Owing to the good coverage of the InAs nanowire by the 50-nm-thick GdScO3 layer, which was deposited by pulsed-laser deposition, the gate leakage current is sufficiently suppressed.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000279127700044
DO  - DOI:10.1007/s00339-010-5804-z
UR  - https://juser.fz-juelich.de/record/10462
ER  -