Hauptseite > Publikationsdatenbank > Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric > print

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005     20180208232940.0
024 7 _ |2 DOI
|a 10.1007/s00339-010-5804-z
024 7 _ |2 WOS
|a WOS:000279127700044
024 7 _ |2 ISSN
|a 0947-8396
037 _ _ |a PreJuSER-10462
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Volk, C.
|b 0
|u FZJ
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245 _ _ |a Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric
260 _ _ |c 2010
|a Berlin
|b Springer
300 _ _ |a 305 - 308
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics A
|x 0947-8396
|0 560
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|v 100
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We investigated the properties of gadolinium scandate (GdScO3) as a gate dielectric for top-gate electrodes on undoped InAs nanowires. It is demonstrated that due to the high dielectric constant of GdScO3 (k=22), a better control of the conductance of the nanowire is achieved compared to a reference SiO2-isolated back-gate electrode. We analyzed the output and transfer characteristics of top-gate-controlled InAs wires at room temperature and at temperatures down to 4 K. Owing to the good coverage of the InAs nanowire by the 50-nm-thick GdScO3 layer, which was deposited by pulsed-laser deposition, the gate leakage current is sufficiently suppressed.
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700 1 _ |a Schubert, J.
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700 1 _ |a Weis, K.
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700 1 _ |a Estévez Hernández, S.
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700 1 _ |a Akabori, M.
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700 1 _ |a Sladek, K.
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700 1 _ |a Hardtdegen, H.
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700 1 _ |a Schäpers, T.
|b 7
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773 _ _ |0 PERI:(DE-600)1398311-8
|a 10.1007/s00339-010-5804-z
|g Vol. 100, p. 305 - 308
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|t Applied physics / A
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|x 0947-8396
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856 7 _ |u http://dx.doi.org/10.1007/s00339-010-5804-z
909 C O |o oai:juser.fz-juelich.de:10462
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914 1 _ |y 2010
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920 1 _ |d 31.12.2010
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