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@INPROCEEDINGS{Barysch:1046457,
      author       = {Barysch, Vera and Yu, Shicheng},
      title        = {{A}tomic layer deposition ({ALD})},
      school       = {RWTH Aachen},
      reportid     = {FZJ-2025-03810},
      year         = {2025},
      abstract     = {M III.1: Functional Layers - Atomic Layer
                      Deposition(ALD)Vera Barysch (Supervisor: Shicheng
                      Yu)IntroductionAtomic layer deposition (ALD) is a thin-film
                      growth method in which a substrate is first exposedto a
                      gaseous reactant that chemisorbs onto its surface. After
                      purging excess reactant and byproducts,a second gaseous
                      reactant is introduced, reacting with the first layer to
                      form a solid film(Figure 1). By repeating this cycle, the
                      film thickness can be increased with atomic-scale
                      precision.This self-limiting growth mechanism enables
                      precise control over layer thickness and conformality,even
                      on complex 3D surfaces.[1]Figure 3: Schematic depiction of
                      the ALD process. The cycle can be repeated until the desired
                      layer thickness is achieved. [2]The main drawbacks of ALD
                      are its low throughput and relatively high production costs,
                      whichinitially limited its use in functional coatings.
                      However, with the continuing miniaturization ofelectronic
                      devices following Moore’s law, precise nanoscale control
                      has become increasinglyimportant, paving the way for broader
                      ALD adoption. In contrast to chemical vapor deposition(CVD)
                      or sputtering, ALD offers better uniformity and
                      conformality.[1]ApplicationsSince its introduction by
                      Aleskovski in Russia and subsequent commercial development
                      bySuntola et al. in Finland, ALD has been applied in the
                      fabrication of optical devices,semiconductors, and other
                      electronics, as well as in catalysis and anti-corrosion
                      coatings. Inelectrochemical energy systems, notable
                      applications include:- LTO-coated LLZTO solid electrolytes:
                      Li6.45 Al0.05La3Zr1.6Ta0.4O12(LLZTO) was coatedwith
                      nanoscale Li4Ti5O12 (LTO) via TiO2 ALD, reducing grain
                      boundary resistance andimproving Li wettability.[3]-
                      Single-atom Pt catalysts: ALD enables the preparation of Pt
                      single-atom catalysts withhigh catalytic efficiency for the
                      hydrogen evolution reaction.[4]- Gas separation membranes:
                      ALD coatings of Al2O3, ZnO, or TiO2 on polymermembranes
                      modify the microstructure, resulting in tunable CO2
                      permeation behavior.[5]ALD variantsThermal ALD relies on
                      heat to drive the surface reactions. Plasma-enhanced ALD
                      (PEALD) usesa plasma source to generate reactive species,
                      enabling deposition at lower temperatures and
                      oftenincreasing reaction rates. Radical-enhanced ALD (REALD)
                      similarly introduces highly reactiveradicals, but without
                      the ion bombardment associated with plasma, which can be
                      advantageous forsensitive substrates. More recently,
                      continuous flow ALD has been developed for
                      industrialscalability: in this approach, substrates pass
                      sequentially through dedicated chambers for
                      precursorexposure and purging under constant flow
                      conditions.[1]Questions1. What are the main advantages and
                      limitations of ALD?2. How is ALD relevant to energy
                      research?References[1] Kääriäinen, T., et al., John Wiley
                      $\&$ Sons 2013.[2] Seo, J., et al., Nanoscale Adv. 4 2022
                      1060.[3] Chang, C.-Y., et al., J. Power Sources 652 2025
                      237593.[4] Cheng, N., et al., Nat. Commun. 7 2016 13638.[5]
                      Niu, X., et al., J. Membr. Sci. 664 2022 121103.},
      month         = {Sep},
      date          = {2025-09-01},
      organization  = {EC Days, Eindhoven (Netherlands), 1
                       Sep 2025 - 2 Sep 2025},
      subtyp        = {Other},
      cin          = {IET-1},
      cid          = {I:(DE-Juel1)IET-1-20110218},
      pnm          = {1223 - Batteries in Application (POF4-122) / HITEC -
                      Helmholtz Interdisciplinary Doctoral Training in Energy and
                      Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF4-1223 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)31},
      url          = {https://juser.fz-juelich.de/record/1046457},
}