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| Hauptseite > Publikationsdatenbank > A constitutive theory to represent non-idealities in contacting of SOC interconnect contacts > print |
| Hauptseite > Publikationsdatenbank > A constitutive theory to represent non-idealities in contacting of SOC interconnect contacts > print |
| 001 | 1046645 | ||
| 005 | 20251027202212.0 | ||
| 020 | _ | _ | |a 978-3-95806-846-9 |
| 024 | 7 | _ | |a 10.34734/FZJ-2025-03877 |2 datacite_doi |
| 037 | _ | _ | |a FZJ-2025-03877 |
| 100 | 1 | _ | |a Pinto, Ralstom |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a A constitutive theory to represent non-idealities in contacting of SOC interconnect contacts |f - 2025-07-29 |
| 260 | _ | _ | |a Jülich |c 2025 |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |
| 300 | _ | _ | |a xii, 139 |
| 336 | 7 | _ | |a Output Types/Dissertation |2 DataCite |
| 336 | 7 | _ | |a Book |0 PUB:(DE-HGF)3 |2 PUB:(DE-HGF) |m book |
| 336 | 7 | _ | |a DISSERTATION |2 ORCID |
| 336 | 7 | _ | |a PHDTHESIS |2 BibTeX |
| 336 | 7 | _ | |a Thesis |0 2 |2 EndNote |
| 336 | 7 | _ | |a Dissertation / PhD Thesis |b phd |m phd |0 PUB:(DE-HGF)11 |s 1761565994_28561 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a doctoralThesis |2 DRIVER |
| 490 | 0 | _ | |a Schriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment |v 673 |
| 502 | _ | _ | |a Dissertation, RWTH Aachen University, 2025 |c RWTH Aachen University |b Dissertation |d 2025 |
| 520 | _ | _ | |a The electrical contact resistance at solid oxide cell (SOC) contacts is a key aspect which contributes to ohmic losses in an SOC stack. These resistances are primarily dependent on the mechanical contact pressures applied in the active area, which are influenced by non-idealities caused by manufacturing limitations. Finite element methods (FEM) can be used to study these phenomena, but conventional simulation approaches are often impractical due to excessive computation times. Such excessive computational times are caused by complex designs of repeating components and high mesh resolutions required for accurate modeling. To address these challenges, this work investigates the use of computational homogenization techniques in the SOC stack. These methods characterize the periodically repeating structure of interconnect contacts as an equivalent material response, capturing the required effects while significantly reducing computation time. The non-idealities arising from manufacturing tolerances are incorporated using a constitutive material model demonstrating an offset-formulation, while the soft porous coating on the contacts is represented through a coating-formulation. Furthermore, the model shows temperaturedependent and rate-dependent behavior, making it capable of simulating the various loading stages in the lifecycle of an SOC contact. On developing a simplified modeling approach for the aforementioned challenges, a framework is developed to extrapolate key parameters relevant to SOC performance directly from this simplified model. This motivates the use of the simplified model as a replacement of full-field modeling approaches. The developed modeling framework is validated through experimental case studies, which focus on evaluating the mechanical contact pressure after stacking and also the electrical contact resistance during operation. The findings from this work have important implications for optimizing several process parameters to achieve an ideal contact configuration in the active area of an SOC stack. These parameters may include stacking force, tolerance limits, temperature distribution, material properties and the geometric design of contacts, which can be evaluated efficiently using the proposed computational approach. |
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| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/1046645/files/Energie_Umwelt_673.pdf |y OpenAccess |
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| 914 | 1 | _ | |y 2025 |
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| 920 | 1 | _ | |0 I:(DE-Juel1)IMD-2-20101013 |k IMD-2 |l Werkstoffsynthese und Herstellungsverfahren |x 0 |
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