TY  - JOUR
AU  - Espiari, Abbas
AU  - Padberg, Henriette
AU  - Kiehn, Alexander
AU  - KristofferSchnieders
AU  - Zhang, Jiayuan
AU  - Mussler, Gregor
AU  - Wiefels, Stefan
AU  - Jalil, AbdurRehman
AU  - Grützmacher, Detlev
TI  - The Influence of Reactive Ion Etching Chemistry on InitialResistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices
JO  - Materials
VL  - 18
IS  - 20
SN  - 1996-1944
CY  - Basel
PB  - MDPI
M1  - FZJ-2025-04201
SP  - 4681 -
PY  - 2025
AB  - Phase-change memory (PCM) is a promising candidate for in-memory computation and neuromorphic computing due to its high endurance, low cycle-to-cycle variability, and low read noise. However, among other factors, its performance strongly depends on the post-lithography fabrication steps. This study examines the impact of reactive ion etching (RIE) on PCM device performance by evaluating different etching gas mixtures, CHF3:O2, H2:Ar, and Ar, and determining their impact on key device characteristics, particularly initial resistance and cycling stability. The present study demonstrates that a two-step etching approach in which the capping layer is first removed using H2:Ar and the underlying GST layer is subsequently etched using physical Ar sputtering ensures stable and reliable PCM operation. In contrast, chemically reactive gases negatively impact the initial resistance, cycling stability, and device lifetime, likely due to alterations in the material composition. For the cycling stability evaluation, an advanced measurement algorithm utilizing the aixMATRIX setup by aixACCT Systems is employed. This algorithm enables automated testing, dynamically adjusting biasing parameters based on cell responses, ensuring a stable ON/OFF ratio and high-throughput characterization.
LB  - PUB:(DE-HGF)16
DO  - DOI:10.3390/ma18204681
UR  - https://juser.fz-juelich.de/record/1047283
ER  -