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@ARTICLE{Espiari:1047283,
      author       = {Espiari, Abbas and Padberg, Henriette and Kiehn, Alexander
                      and KristofferSchnieders and Zhang, Jiayuan and Mussler,
                      Gregor and Wiefels, Stefan and Jalil, AbdurRehman and
                      Grützmacher, Detlev},
      title        = {{T}he {I}nfluence of {R}eactive {I}on {E}tching {C}hemistry
                      on {I}nitial{R}esistance and {C}ycling {S}tability of
                      {L}ine-{T}ype ({B}ridge) {P}hase-{C}hange {M}emory
                      {D}evices},
      journal      = {Materials},
      volume       = {18},
      number       = {20},
      issn         = {1996-1944},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2025-04201},
      pages        = {4681 -},
      year         = {2025},
      abstract     = {Phase-change memory (PCM) is a promising candidate for
                      in-memory computation and neuromorphic computing due to its
                      high endurance, low cycle-to-cycle variability, and low read
                      noise. However, among other factors, its performance
                      strongly depends on the post-lithography fabrication steps.
                      This study examines the impact of reactive ion etching (RIE)
                      on PCM device performance by evaluating different etching
                      gas mixtures, CHF3:O2, H2:Ar, and Ar, and determining their
                      impact on key device characteristics, particularly initial
                      resistance and cycling stability. The present study
                      demonstrates that a two-step etching approach in which the
                      capping layer is first removed using H2:Ar and the
                      underlying GST layer is subsequently etched using physical
                      Ar sputtering ensures stable and reliable PCM operation. In
                      contrast, chemically reactive gases negatively impact the
                      initial resistance, cycling stability, and device lifetime,
                      likely due to alterations in the material composition. For
                      the cycling stability evaluation, an advanced measurement
                      algorithm utilizing the aixMATRIX setup by aixACCT Systems
                      is employed. This algorithm enables automated testing,
                      dynamically adjusting biasing parameters based on cell
                      responses, ensuring a stable ON/OFF ratio and
                      high-throughput characterization.},
      cin          = {PGI-7 / PGI-9 / PGI-10},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-9-20110106 /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.3390/ma18204681},
      url          = {https://juser.fz-juelich.de/record/1047283},
}