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@ARTICLE{Tilgner:1047291,
author = {Tilgner, Niclas and Wolff, Susanne and Soubatch, Serguei
and Lee, Tien-Lin and Göhler, Fabian and Tautz, F Stefan
and Seyller, Thomas and Schädlich, Philip and Kumpf,
Christian},
title = {{S}olving the phase problem of diffraction: x-ray standing
wave imaging on bismuthene/{S}i{C}(0001)},
journal = {2D Materials},
volume = {12},
number = {4},
issn = {2053-1583},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2025-04206},
pages = {045020},
year = {2025},
abstract = {For establishing a fundamental understanding of the
emerging properties of two-dimensional (2D) materials, a
reliable determination of the crystallographic structure is
essential, as we demonstrate in this work for the specific
case of the quantum spin Hall insulator bismuthene.
Diffraction-based methods are widely used for structure
determination, however, they suffer from a fundamental
shortcoming, the phase retrieval problem, that is the
inability to directly measure the phase of scattered waves.
The normal incidence x-ray standing wave (NIXSW) technique
circumvents this problem by introducing a Bragg-generated
x-ray standing wave field throughout the sample, relative to
which any atomic species can be localized. In essence, a
single NIXSW measurement captures the complex scattering
factor (amplitude and phase) corresponding to one single
Bragg reflection. Collecting data for multiple reflections
enables a three-dimensional reconstruction of the scattering
density as the Fourier sum of all measured scattering
factors. Here, we utilize this technique to reveal the
mechanism of a reversible switching process that has been
reported for a 2D Bi layer recently (Tilgner et al 2025 Nat.
Commun. 16, 6171). In this prominent example, the Bi layer
is confined between a 4H-SiC substrate and an epitaxial
graphene layer, and can be reversibly switched between an
electronically inactive precursor state and the bismuthene
state. In our NIXSW imaging experiment, we clearly identify
the change of the adsorption site of the Bi atoms, caused by
H-saturation of one out of three Si dangling bonds per unit
cell, as the key feature leading to the formation of the
characteristic band structure of the 2D bismuthene
honeycomb.},
cin = {PGI-3},
ddc = {530},
cid = {I:(DE-Juel1)PGI-3-20110106},
pnm = {5213 - Quantum Nanoscience (POF4-521) / DFG project
G:(GEPRIS)470743959 - Untersuchung der
Transporteigenschaften von interkaliertem Graphene auf
atomarer Skala (470743959) / SFB 1083 A12 - Struktur und
Anregungen von hetero-epitaktischen Schichtsystemen aus
schwach wechselwirkenden 2D-Materialien und molekularen
Schichten (A12) (385975694)},
pid = {G:(DE-HGF)POF4-5213 / G:(GEPRIS)470743959 /
G:(GEPRIS)385975694},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001595688800001},
doi = {10.1088/2053-1583/ae0f27},
url = {https://juser.fz-juelich.de/record/1047291},
}