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@INPROCEEDINGS{Krystofiak:1050052,
author = {Krystofiak, Lukas},
title = {{A} scaling-friendly memristor-based leaky
integrate-and-fire circuit in a {TSMC} 28nm process
technology},
reportid = {FZJ-2025-05766},
year = {2025},
abstract = {Spiking neural networks mimic the way the human brain
processes data and excel in efficiency. With the advent of
the memristor, foundations are laid for scalable and
low-power integrated electronic implementations. Key is the
small form factor of the memristor and its ability to
passively retain a multilevel state.To investigate the
feasibility of memristor-based spiking neural networks, a
first chip is developed containing all necessary circuits to
read and write memristors. It will be connected via
chip-to-chip bonding wires to a 3 by 3 memristor array. In
this abstract the focus is on the implemented leaky
integrate-and-fire circuit (LIF).While the memristors act as
the synapses of the neural network, the neurons are modeled
as current-based RC LIF circuits. Previous implementations
minimized the current to reduce the area footprint as much
as possible which is dominated by the capacitor size[1][2].
This is prone to process variations, especially in smaller
technology nodes. Thus, precise analog calibrations are
needed for every single neuron. This complicates scaling
spiking neuronal networks. A novel approach reduces the
width of incoming spikes in the LIF circuit to a fraction of
the original by an additional duty-cycle element which is
controlled by ɸPulse. This is generated globally by a
reference clock with an adjustable duty cycle and then
distributed to all LIF elements minimizing the wiring and
biasing overhead. Additionally, the operation time frame of
the SNN can be tuned through this. The duty cycle approach
effectively transforms the system to the time-discrete
domain, but with the very high switching speeds, enabled by
a 28 nm process technology, compared to the intended
operating speed of the neural network it can be regarded as
pseudo time-continuous.A first tapeout in a 28nm process
technology is scheduled for September 2025 and post-layout
simulations will be shown.},
month = {Oct},
date = {2025-10-13},
organization = {8th International Conference on
Memristive Materials, Devices $\&$
Systems, Edinburgh (UK), 13 Oct 2025 -
16 Oct 2025},
subtyp = {After Call},
cin = {PGI-4},
cid = {I:(DE-Juel1)PGI-4-20110106},
pnm = {5234 - Emerging NC Architectures (POF4-523)},
pid = {G:(DE-HGF)POF4-5234},
typ = {PUB:(DE-HGF)6},
url = {https://juser.fz-juelich.de/record/1050052},
}