%0 Electronic Article
%A Mistroni, Alberto
%A Lisker, Marco
%A Yamamoto, Yuji
%A Wen, Wei-Chen
%A Fidorra, Fabian
%A Tetzner, Henriette
%A Diebel, Laura K.
%A Visser, Lino
%A Anupam, Spandan
%A Mourik, Vincent
%A Schreiber, Lars R.
%A Bluhm, Hendrik
%A Bougeard, Dominique
%A Zoellner, Marvin H.
%A Capellini, Giovanni
%A Reichmann, Felix
%T High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
%I arXiv
%M FZJ-2025-05803
%D 2025
%X The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufacturing approach. To this end, both the gate stack and the Si/SiGe heterostructure must be of high quality, exhibiting uniformity across the wafer and consistent performance across multiple fabrication runs. Here, we report a comprehensive investigation of Si/SiGe heterostructures and gate stacks, fabricated in an industry-standard 200 mm BiCMOS pilot line. We evaluate the homogeneity and reproducibility by probing the properties of the two-dimensional electron gas (2DEG) in the shallow silicon quantum well through magnetotransport characterization of Hall bar-shaped field-effect transistors at 1.5 K. Across all the probed wafers, we observe minimal variation of the 2DEG properties, with an average maximum mobility of $(4.25\pm0.17)\times 10^{5}$ cm$^{2}$/Vs and low percolation carrier density of $(5.9\pm0.18)\times 10^{10}$ cm$^{-2}$ evidencing low disorder potential in the quantum well. The observed narrow statistical distribution of the transport properties highlights the reproducibility and the stability of the fabrication process. Furthermore, wafer-scale characterization of a selected individual wafer evidenced the homogeneity of the device performances across the wafer area. Based on these findings, we conclude that our material and processes provide a suitable platform for the development of scalable, Si/SiGe-based quantum devices.
%K Mesoscale and Nanoscale Physics (cond-mat.mes-hall) (Other)
%K Applied Physics (physics.app-ph) (Other)
%K FOS: Physical sciences (Other)
%F PUB:(DE-HGF)25
%9 Preprint
%R 10.48550/ARXIV.2506.14660
%U https://juser.fz-juelich.de/record/1050095