% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Mistroni:1050095,
      author       = {Mistroni, Alberto and Lisker, Marco and Yamamoto, Yuji and
                      Wen, Wei-Chen and Fidorra, Fabian and Tetzner, Henriette and
                      Diebel, Laura K. and Visser, Lino and Anupam, Spandan and
                      Mourik, Vincent and Schreiber, Lars R. and Bluhm, Hendrik
                      and Bougeard, Dominique and Zoellner, Marvin H. and
                      Capellini, Giovanni and Reichmann, Felix},
      title        = {{H}igh yield, low disorder {S}i/{S}i{G}e heterostructures
                      for spin qubit devices manufactured in a {B}i{CMOS} pilot
                      line},
      publisher    = {arXiv},
      reportid     = {FZJ-2025-05803},
      year         = {2025},
      abstract     = {The prospect of achieving fault-tolerant quantum computing
                      with semiconductor spin qubits in Si/SiGe heterostructures
                      relies on the integration of a large number of identical
                      devices, a feat achievable through a scalable (Bi)CMOS
                      manufacturing approach. To this end, both the gate stack and
                      the Si/SiGe heterostructure must be of high quality,
                      exhibiting uniformity across the wafer and consistent
                      performance across multiple fabrication runs. Here, we
                      report a comprehensive investigation of Si/SiGe
                      heterostructures and gate stacks, fabricated in an
                      industry-standard 200 mm BiCMOS pilot line. We evaluate the
                      homogeneity and reproducibility by probing the properties of
                      the two-dimensional electron gas (2DEG) in the shallow
                      silicon quantum well through magnetotransport
                      characterization of Hall bar-shaped field-effect transistors
                      at 1.5 K. Across all the probed wafers, we observe minimal
                      variation of the 2DEG properties, with an average maximum
                      mobility of $(4.25\pm0.17)\times 10^{5}$ cm$^{2}$/Vs and low
                      percolation carrier density of $(5.9\pm0.18)\times 10^{10}$
                      cm$^{-2}$ evidencing low disorder potential in the quantum
                      well. The observed narrow statistical distribution of the
                      transport properties highlights the reproducibility and the
                      stability of the fabrication process. Furthermore,
                      wafer-scale characterization of a selected individual wafer
                      evidenced the homogeneity of the device performances across
                      the wafer area. Based on these findings, we conclude that
                      our material and processes provide a suitable platform for
                      the development of scalable, Si/SiGe-based quantum devices.},
      keywords     = {Mesoscale and Nanoscale Physics (cond-mat.mes-hall) (Other)
                      / Applied Physics (physics.app-ph) (Other) / FOS: Physical
                      sciences (Other)},
      cin          = {PGI-11},
      cid          = {I:(DE-Juel1)PGI-11-20170113},
      pnm          = {5221 - Advanced Solid-State Qubits and Qubit Systems
                      (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5221},
      typ          = {PUB:(DE-HGF)25},
      doi          = {10.48550/ARXIV.2506.14660},
      url          = {https://juser.fz-juelich.de/record/1050095},
}