Contribution to a conference proceedings

FZJ-2026-01306

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Memristor Resistance State Tuning with High-Frequency Periodic Inputs

Messaris, I. ; Ntinas, V. ; Prousalis, D. ; Demirkol, A. S. ; Tetzlaff, R. ; Zhang, S.FZJ* ; Rana, V.FZJ* ; Menzel, S.FZJ* ; Ascoli, A.

2025
IEEE

This record in other databases:  

Please use a persistent id in citations: doi:10.1109/ISCAS56072.2025.11043454

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)
4. Theorie der Starken Wechselwirkung (IAS-4)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. DFG project G:(GEPRIS)441957207 - Hardwarerealisierung von universellen speicherbasierten memristiven zellularen Rechnerstrukturen (441957207) (441957207)

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