TY  - JOUR
AU  - Aagaard, Martin
AU  - Concepción, Omar
AU  - Buca, Dan
AU  - Ikonic, Zoran
AU  - Julsgaard, Brian
TI  - Luminescence properties of GeSn laser materials: Influence of buffered substrates
JO  - Journal of applied physics
VL  - 138
IS  - 10
SN  - 0021-8979
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2026-01441
SP  - 105701
PY  - 2025
AB  - Time-resolved photoluminescence spectroscopy is used to measure the luminescence lifetime of two direct bandgap GeSn samples. The GeSn samples are similar in respect to the material properties, except for one being grown on a thin Ge-post-deposition annealed buffered layer, while the other is grown on a thick Ge virtual substrate. The total photoluminescence intensity and the lifetime of the samples are compared as a function of temperature between 20K and 300K and pump fluence between 2.5 × 1013 cm−2 and 1 × 1015 cm−2, showing little difference between the two samples. The luminescence lifetime varies only little with temperature, and calculations of the total photoluminescence intensity based on k·p-theory are compared to experimentally attained values, yielding a good functional agreement versus temperature. The results point to the L-valley as one of the primary inhibiting factors of the photoluminescence intensity at non-cryogenictemperatures.
LB  - PUB:(DE-HGF)16
DO  - DOI:10.1063/5.0281958
UR  - https://juser.fz-juelich.de/record/1053101
ER  -