% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Aagaard:1053101,
      author       = {Aagaard, Martin and Concepción, Omar and Buca, Dan and
                      Ikonic, Zoran and Julsgaard, Brian},
      title        = {{L}uminescence properties of {G}e{S}n laser materials:
                      {I}nfluence of buffered substrates},
      journal      = {Journal of applied physics},
      volume       = {138},
      number       = {10},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2026-01441},
      pages        = {105701},
      year         = {2025},
      abstract     = {Time-resolved photoluminescence spectroscopy is used to
                      measure the luminescence lifetime of two direct bandgap GeSn
                      samples. The GeSn samples are similar in respect to the
                      material properties, except for one being grown on a thin
                      Ge-post-deposition annealed buffered layer, while the other
                      is grown on a thick Ge virtual substrate. The total
                      photoluminescence intensity and the lifetime of the samples
                      are compared as a function of temperature between 20K and
                      300K and pump fluence between 2.5 × 1013 cm−2 and 1 ×
                      1015 cm−2, showing little difference between the two
                      samples. The luminescence lifetime varies only little with
                      temperature, and calculations of the total photoluminescence
                      intensity based on k·p-theory are compared to
                      experimentally attained values, yielding a good functional
                      agreement versus temperature. The results point to the
                      L-valley as one of the primary inhibiting factors of the
                      photoluminescence intensity at non-cryogenictemperatures.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / DFG project
                      G:(GEPRIS)299480227 - SiGeSn Laser für die Silizium
                      Photonik (299480227) / LASTSTEP - group-IV LASer and
                      deTectors on Si-TEchnology Platform (101070208)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)299480227 /
                      G:(EU-Grant)101070208},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1063/5.0281958},
      url          = {https://juser.fz-juelich.de/record/1053101},
}