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@ARTICLE{Tetzner:1053102,
      author       = {Tetzner, H. and Corley-Wiciak, A. A. and Devaiya,
                      Ambrishkumar and Concepción, O. and Stolarek, D. and
                      Schubert, M. A. and Yamamoto, Y. and Buca, D. and Capellini,
                      G.},
      title        = {{D}islocations influence the background hole densities in
                      {G}e/{S}i virtual substrates},
      journal      = {Applied physics letters},
      volume       = {127},
      number       = {25},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2026-01442},
      pages        = {251901},
      year         = {2025},
      abstract     = {In this study, the interaction between extended defects and
                      the electrical activity of Ge/Si (001) plastically relaxed
                      epitaxial layers is examined.We used depth-resolved
                      electrochemical capacitance–voltage profiling to measure
                      the background active carrier concentration in a set
                      ofepilayers featuring a threading dislocation density
                      spanning more than four orders of magnitude (from 7 106 to
                      2.5 1010 cm 2). Thedepth profile of the carrier
                      concentration shows a pronounced peak, which is attributed
                      to the presence of misfit dislocations at the
                      Ge/Siheterointerface; and a nearly constant p-type
                      background extending throughout the Ge layer. This
                      background level decreases with increasedcrystalline
                      quality, and saturates at  1 1015 cm 3 when the
                      dislocation density falls below  1 108 cm 2,
                      indicating a lower limit governedby electrically active
                      defect states and impurity-related point defect complexes
                      formed during epitaxial growth and thermal processing.These
                      findings suggest that extended and point defects critically
                      influence the unintentional doping observed in Ge on Si
                      epitaxy.Understanding their interplay provides valuable
                      insights into defect engineering strategies that can
                      suppress electrically active defects,enabling the
                      fabrication of high-performance Ge-based electronic and
                      photonic devices with improved doping control and more
                      predictableelectrical behavior.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / DFG project
                      G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von
                      SiGeSn-Mikrobauelementen (537127697)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)537127697},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1063/5.0308836},
      url          = {https://juser.fz-juelich.de/record/1053102},
}