Gast ::
| Hauptseite > Publikationsdatenbank > Dislocations influence the background hole densities in Ge/Si virtual substrates > print |
| Hauptseite > Publikationsdatenbank > Dislocations influence the background hole densities in Ge/Si virtual substrates > print |
| 001 | 1053102 | ||
| 005 | 20260202125356.0 | ||
| 024 | 7 | _ | |a 10.1063/5.0308836 |2 doi |
| 024 | 7 | _ | |a 0003-6951 |2 ISSN |
| 024 | 7 | _ | |a 1520-8842 |2 ISSN |
| 024 | 7 | _ | |a 1077-3118 |2 ISSN |
| 037 | _ | _ | |a FZJ-2026-01442 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Tetzner, H. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Dislocations influence the background hole densities in Ge/Si virtual substrates |
| 260 | _ | _ | |a Melville, NY |c 2025 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1770030716_784 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a In this study, the interaction between extended defects and the electrical activity of Ge/Si (001) plastically relaxed epitaxial layers is examined.We used depth-resolved electrochemical capacitance–voltage profiling to measure the background active carrier concentration in a set ofepilayers featuring a threading dislocation density spanning more than four orders of magnitude (from 7 106 to 2.5 1010 cm 2). Thedepth profile of the carrier concentration shows a pronounced peak, which is attributed to the presence of misfit dislocations at the Ge/Siheterointerface; and a nearly constant p-type background extending throughout the Ge layer. This background level decreases with increasedcrystalline quality, and saturates at 1 1015 cm 3 when the dislocation density falls below 1 108 cm 2, indicating a lower limit governedby electrically active defect states and impurity-related point defect complexes formed during epitaxial growth and thermal processing.These findings suggest that extended and point defects critically influence the unintentional doping observed in Ge on Si epitaxy.Understanding their interplay provides valuable insights into defect engineering strategies that can suppress electrically active defects,enabling the fabrication of high-performance Ge-based electronic and photonic devices with improved doping control and more predictableelectrical behavior. |
| 536 | _ | _ | |a 5234 - Emerging NC Architectures (POF4-523) |0 G:(DE-HGF)POF4-5234 |c POF4-523 |f POF IV |x 0 |
| 536 | _ | _ | |a DFG project G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen (537127697) |0 G:(GEPRIS)537127697 |c 537127697 |x 1 |
| 588 | _ | _ | |a Dataset connected to CrossRef, Journals: juser.fz-juelich.de |
| 650 | 2 | 7 | |a Condensed Matter Physics |0 V:(DE-MLZ)SciArea-120 |2 V:(DE-HGF) |x 0 |
| 650 | 1 | 7 | |a Basic research |0 V:(DE-MLZ)GC-2004-2016 |2 V:(DE-HGF) |x 0 |
| 700 | 1 | _ | |a Corley-Wiciak, A. A. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Devaiya, Ambrishkumar |0 P:(DE-Juel1)201941 |b 2 |u fzj |
| 700 | 1 | _ | |a Concepción, O. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Stolarek, D. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Schubert, M. A. |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Yamamoto, Y. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Buca, D. |0 P:(DE-Juel1)125569 |b 7 |
| 700 | 1 | _ | |a Capellini, G. |0 P:(DE-HGF)0 |b 8 |
| 773 | _ | _ | |a 10.1063/5.0308836 |g Vol. 127, no. 25, p. 251901 |0 PERI:(DE-600)1469436-0 |n 25 |p 251901 |t Applied physics letters |v 127 |y 2025 |x 0003-6951 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/1053102/files/2026-%20APL%20_Dislocations%20in%20Ge%20_IHP.pdf |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:1053102 |p VDB |
| 910 | 1 | _ | |a IHP |0 I:(DE-HGF)0 |b 0 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a IHP |0 I:(DE-HGF)0 |b 1 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)201941 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a IHP |0 I:(DE-HGF)0 |b 4 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a IHP |0 I:(DE-HGF)0 |b 6 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a Nagoya University |0 I:(DE-HGF)0 |b 6 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)125569 |
| 910 | 1 | _ | |a IHP |0 I:(DE-HGF)0 |b 8 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a University Roma Tre |0 I:(DE-HGF)0 |b 8 |6 P:(DE-HGF)0 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Natural, Artificial and Cognitive Information Processing |1 G:(DE-HGF)POF4-520 |0 G:(DE-HGF)POF4-523 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Neuromorphic Computing and Network Dynamics |9 G:(DE-HGF)POF4-5234 |x 0 |
| 915 | _ | _ | |a National-Konsortium |0 StatID:(DE-HGF)0430 |2 StatID |d 2024-12-18 |w ger |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |d 2024-12-18 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |d 2024-12-18 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Clarivate Analytics Master Journal List |d 2024-12-18 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |d 2024-12-18 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0160 |2 StatID |b Essential Science Indicators |d 2024-12-18 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1230 |2 StatID |b Current Contents - Electronics and Telecommunications Collection |d 2024-12-18 |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0113 |2 StatID |b Science Citation Index Expanded |d 2024-12-18 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |d 2024-12-18 |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b APPL PHYS LETT : 2022 |d 2024-12-18 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0600 |2 StatID |b Ebsco Academic Search |d 2024-12-18 |
| 915 | _ | _ | |a Peer Review |0 StatID:(DE-HGF)0030 |2 StatID |b ASC |d 2024-12-18 |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |d 2024-12-18 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|