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@ARTICLE{CorleyWiciak:1053104,
      author       = {Corley-Wiciak, Agnieszka Anna and Zaitsev, Ignatii and
                      Concepción, Omar and Buca, Dan and Manganelli, Costanza L
                      and Capellini, Giovanni and Spirito, Davide},
      title        = {{S}hedding light on epitaxial {S}i{G}e{S}n alloys with
                      {R}aman spectroscopy: local order and thermomechanical
                      properties},
      journal      = {Journal of physics / Condensed matter},
      volume       = {37},
      number       = {49},
      issn         = {0953-8984},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2026-01444},
      pages        = {493002 -},
      year         = {2025},
      abstract     = {Thanks to recent breakthroughs in their epitaxy compatible
                      with industrial standard, (Si)GeSnalloys are now emerging as
                      material platform for monolithic integration of
                      next-generationelectronics, optoelectronics,
                      thermoelectrics, and photonics. In order to support the
                      rapidevolution of the (Si)GeSn material system, different
                      advanced characterization methods have tobe developed to
                      investigate its many interesting physical properties. This
                      work provides anoverview of Raman spectroscopy investigation
                      of binary GeSn and ternary SiGeSn alloys. Afterreviewing the
                      fundamental principles of Raman spectroscopy, the typical
                      features of (Si)GeSnalloy Raman spectra are introduced.
                      These features are then attributed to vibrational modes
                      ofatom pairs, high-order scattering, or disorder-induced
                      scattering. The discussion also covers thedetails of
                      polarization-resolved Raman spectroscopy applied
                      specifically to the group-IV alloyscase, with a focus on
                      probing the local atomic ordering. Different applications of
                      the Ramanspectroscopy to the (Si)GeSn material system are
                      covered. Initially, micro-Ramanmeasurements are complemented
                      by ancillary techniques, such as x-ray diffraction. This
                      allowsthe spatially resolved composition and strain of the
                      investigated epitaxial alloys to bedetermined based on
                      calibrated coefficients of vibrational mode shifts. Raman
                      hyperspectralimaging, along with its integration with
                      numerical simulations for strain mapping inmicrostructures
                      and devices, is also presented.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / LASTSTEP -
                      group-IV LASer and deTectors on Si-TEchnology Platform
                      (101070208) / DFG project G:(GEPRIS)537127697 -
                      Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen
                      (537127697)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(EU-Grant)101070208 /
                      G:(GEPRIS)537127697},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1088/1361-648X/ae1c0b},
      url          = {https://juser.fz-juelich.de/record/1053104},
}