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@ARTICLE{Graziosi:1053109,
      author       = {Graziosi, Patrizio and Marian, Damiano and Tomadin, Andrea
                      and Roddaro, Stefano and Concepción, Omar and
                      Tiscareño-Ramírez, Jhonny and Kaul, Prateek and
                      Corley-Wiciak, Agnieszka Anna and Buca, Dan and Capellini,
                      Giovanni and Virgilio, Michele},
      title        = {{E}pitaxial {S}i{G}e{S}n {A}lloys for {CMOS}-{C}ompatible
                      {T}hermoelectric {D}evices},
      journal      = {ACS applied energy materials},
      volume       = {8},
      number       = {13},
      issn         = {2574-0962},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2026-01449},
      pages        = {9075 - 9082},
      year         = {2025},
      abstract     = {The integration of thermoelectric devices into mainstream
                      microelectronictechnological platforms could be a major
                      breakthrough in various fieldswithin the so-called Green-IT
                      realm. In this article, the thermoelectric properties
                      ofheteroepitaxial SiGeSn alloys, an emergent CMOS-compatible
                      material system, areevaluated to assess their possible
                      application in thermoelectric devices. To this
                      purpose,starting from the experimentally low lattice thermal
                      conductivity of SiGeSn/Ge/Si layersof about ∼1 to 2 W/m·K
                      assessed by means of 3-ω measurements, the figure of
                      meritsare calculated through the use of Boltzmann transport
                      equation, taking into account therelevant intervalley
                      scattering processes, peculiar of this multivalley material
                      system.Values for the figure of merit ZT exceeding 1 have
                      been obtained for both p- and n-typematerial at operating
                      temperatures within the 300−400 K range, i.e., at typical
                      on-chiptemperatures. In this interval, the predicted power
                      factor also features very competitivevalues on the order of
                      20 μW/cm ·K2. Our finding indicates that this emergent
                      class ofSi-based materials has extremely good prospects for
                      real-world applications and canfurther stimulate scientific
                      investigation in this ambit.},
      cin          = {PGI-9},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / DFG project
                      G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von
                      SiGeSn-Mikrobauelementen (537127697)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)537127697},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1021/acsaem.5c00733},
      url          = {https://juser.fz-juelich.de/record/1053109},
}