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| 001 | 1053109 | ||
| 005 | 20260202125515.0 | ||
| 024 | 7 | _ | |a 10.1021/acsaem.5c00733 |2 doi |
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| 100 | 1 | _ | |a Graziosi, Patrizio |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices |
| 260 | _ | _ | |a Washington, DC |c 2025 |b ACS Publications |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a The integration of thermoelectric devices into mainstream microelectronictechnological platforms could be a major breakthrough in various fieldswithin the so-called Green-IT realm. In this article, the thermoelectric properties ofheteroepitaxial SiGeSn alloys, an emergent CMOS-compatible material system, areevaluated to assess their possible application in thermoelectric devices. To this purpose,starting from the experimentally low lattice thermal conductivity of SiGeSn/Ge/Si layersof about ∼1 to 2 W/m·K assessed by means of 3-ω measurements, the figure of meritsare calculated through the use of Boltzmann transport equation, taking into account therelevant intervalley scattering processes, peculiar of this multivalley material system.Values for the figure of merit ZT exceeding 1 have been obtained for both p- and n-typematerial at operating temperatures within the 300−400 K range, i.e., at typical on-chiptemperatures. In this interval, the predicted power factor also features very competitivevalues on the order of 20 μW/cm ·K2. Our finding indicates that this emergent class ofSi-based materials has extremely good prospects for real-world applications and canfurther stimulate scientific investigation in this ambit. |
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| 536 | _ | _ | |a DFG project G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen (537127697) |0 G:(GEPRIS)537127697 |c 537127697 |x 1 |
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| 773 | _ | _ | |a 10.1021/acsaem.5c00733 |g Vol. 8, no. 13, p. 9075 - 9082 |0 PERI:(DE-600)2916551-9 |n 13 |p 9075 - 9082 |t ACS applied energy materials |v 8 |y 2025 |x 2574-0962 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/1053109/files/2025%20ACS%20Applied%20En%20Mat%20-%20SiGeSn%20TE.pdf |y OpenAccess |
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