%0 Conference Paper
%A Kaul, Prateek
%A Karthein, Jan
%A Buchhorn, Jonas
%A Kawano, Taizo
%A Usubuchi, Taisei
%A Ishihara, Jun
%A Rotaru, Nicolas
%A Vecchio, Patrick del
%A Concepción Díaz, Omar
%A Grützmacher, Detlev
%A Zhao, Qing-Tai
%A Moutanabbir, Oussama
%A Kohda, Makoto
%A Schäpers, Thomas
%A Buca, Dan Mihai
%T Characterization of a two-dimensional hole gas in a GeSn quantum well system
%I RWTH Aachen
%M FZJ-2026-01471
%D 2025
%Z Restricted viewing for only conference participants
%X Reducing energy consumption is becoming in-creasingly important, especially in light of the growing energy demands of AI-based computing [1]. Spin-based computing approaches, such as spintronics and spin qubits, offer the potential to re-duce the high energy consumption associated with traditional charge-based computation [2,3]. Low nuclear spins, high spin-orbit interaction (SOI), and low effective masses are properties that make a ma-terial desirable for spintronics, making Ge very ap-pealing in the recent years [4]. Alloying Sn with Ge is expected to increase the SOI due to the large nu-cleus of Sn and reduce the effective mass [5] mak-ing the novel CMOS compatible GeSn material system worth investigating.
%B International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting
%C 10 Nov 2025 - 13 Nov 2025, Machida, Tokyo (Japan)
Y2 10 Nov 2025 - 13 Nov 2025
M2 Machida, Tokyo, Japan
%F PUB:(DE-HGF)6
%9 Conference Presentation
%U https://juser.fz-juelich.de/record/1053139