001053139 001__ 1053139
001053139 005__ 20260202140245.0
001053139 037__ $$aFZJ-2026-01471
001053139 041__ $$aEnglish
001053139 1001_ $$0P:(DE-Juel1)194320$$aKaul, Prateek$$b0$$eCorresponding author
001053139 1112_ $$aInternational Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting$$cMachida, Tokyo$$d2025-11-10 - 2025-11-13$$gICSI/ISTDM 2025$$wJapan
001053139 245__ $$aCharacterization of a two-dimensional hole gas in a GeSn quantum well system
001053139 260__ $$c2025
001053139 3367_ $$033$$2EndNote$$aConference Paper
001053139 3367_ $$2DataCite$$aOther
001053139 3367_ $$2BibTeX$$aINPROCEEDINGS
001053139 3367_ $$2DRIVER$$aconferenceObject
001053139 3367_ $$2ORCID$$aLECTURE_SPEECH
001053139 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1770037329_24299$$xAfter Call
001053139 500__ $$aRestricted viewing for only conference participants
001053139 502__ $$cRWTH Aachen
001053139 520__ $$aReducing energy consumption is becoming in-creasingly important, especially in light of the growing energy demands of AI-based computing [1]. Spin-based computing approaches, such as spintronics and spin qubits, offer the potential to re-duce the high energy consumption associated with traditional charge-based computation [2,3]. Low nuclear spins, high spin-orbit interaction (SOI), and low effective masses are properties that make a ma-terial desirable for spintronics, making Ge very ap-pealing in the recent years [4]. Alloying Sn with Ge is expected to increase the SOI due to the large nu-cleus of Sn and reduce the effective mass [5] mak-ing the novel CMOS compatible GeSn material system worth investigating.
001053139 536__ $$0G:(DE-HGF)POF4-5234$$a5234 - Emerging NC Architectures (POF4-523)$$cPOF4-523$$fPOF IV$$x0
001053139 536__ $$0G:(EU-Grant)101070208$$aLASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208)$$c101070208$$fHORIZON-CL4-2021-DIGITAL-EMERGING-01$$x1
001053139 536__ $$0G:(GEPRIS)537127697$$aDFG project G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen (537127697)$$c537127697$$x2
001053139 65027 $$0V:(DE-MLZ)SciArea-120$$2V:(DE-HGF)$$aCondensed Matter Physics$$x0
001053139 65017 $$0V:(DE-MLZ)GC-1601-2016$$2V:(DE-HGF)$$aEngineering, Industrial Materials and Processing$$x0
001053139 65017 $$0V:(DE-MLZ)GC-2004-2016$$2V:(DE-HGF)$$aBasic research$$x1
001053139 7001_ $$0P:(DE-Juel1)187581$$aKarthein, Jan$$b1
001053139 7001_ $$0P:(DE-Juel1)195799$$aBuchhorn, Jonas$$b2
001053139 7001_ $$0P:(DE-HGF)0$$aKawano, Taizo$$b3
001053139 7001_ $$0P:(DE-HGF)0$$aUsubuchi, Taisei$$b4
001053139 7001_ $$0P:(DE-HGF)0$$aIshihara, Jun$$b5
001053139 7001_ $$0P:(DE-HGF)0$$aRotaru, Nicolas$$b6
001053139 7001_ $$0P:(DE-HGF)0$$aVecchio, Patrick del$$b7
001053139 7001_ $$0P:(DE-Juel1)188576$$aConcepción Díaz, Omar$$b8
001053139 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b9
001053139 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b10
001053139 7001_ $$0P:(DE-HGF)0$$aMoutanabbir, Oussama$$b11
001053139 7001_ $$0P:(DE-HGF)0$$aKohda, Makoto$$b12
001053139 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b13
001053139 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b14
001053139 8564_ $$uhttps://iscsi.sakura.ne.jp/iscsi10/
001053139 8564_ $$uhttps://juser.fz-juelich.de/record/1053139/files/Characterization%20of%20two-dimensional%20hole%20gas%20in%20GeSn%20quantum%20well%20system.pdf$$yRestricted
001053139 909CO $$ooai:juser.fz-juelich.de:1053139$$pec_fundedresources
001053139 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)194320$$aForschungszentrum Jülich$$b0$$kFZJ
001053139 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)187581$$aForschungszentrum Jülich$$b1$$kFZJ
001053139 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)195799$$aForschungszentrum Jülich$$b2$$kFZJ
001053139 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)188576$$aForschungszentrum Jülich$$b8$$kFZJ
001053139 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich$$b9$$kFZJ
001053139 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b10$$kFZJ
001053139 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128634$$aForschungszentrum Jülich$$b13$$kFZJ
001053139 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b14$$kFZJ
001053139 9131_ $$0G:(DE-HGF)POF4-523$$1G:(DE-HGF)POF4-520$$2G:(DE-HGF)POF4-500$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$9G:(DE-HGF)POF4-5234$$aDE-HGF$$bKey Technologies$$lNatural, Artificial and Cognitive Information Processing$$vNeuromorphic Computing and Network Dynamics$$x0
001053139 920__ $$lyes
001053139 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
001053139 980__ $$aconf
001053139 980__ $$aVDB
001053139 980__ $$aI:(DE-Juel1)PGI-9-20110106
001053139 980__ $$aUNRESTRICTED