TY  - CONF
AU  - Kaul, Prateek
AU  - Karthein, Jan
AU  - Buchhorn, Jonas
AU  - Kawano, Taizo
AU  - Usubuchi, Taisei
AU  - Ishihara, Jun
AU  - Rotaru, Nicolas
AU  - Vecchio, Patrick del
AU  - Concepción Díaz, Omar
AU  - Grützmacher, Detlev
AU  - Zhao, Qing-Tai
AU  - Moutanabbir, Oussama
AU  - Kohda, Makoto
AU  - Schäpers, Thomas
AU  - Buca, Dan Mihai
TI  - Characterization of a two-dimensional hole gas in a GeSn quantum well system
PB  - RWTH Aachen
M1  - FZJ-2026-01471
PY  - 2025
N1  - Restricted viewing for only conference participants
AB  - Reducing energy consumption is becoming in-creasingly important, especially in light of the growing energy demands of AI-based computing [1]. Spin-based computing approaches, such as spintronics and spin qubits, offer the potential to re-duce the high energy consumption associated with traditional charge-based computation [2,3]. Low nuclear spins, high spin-orbit interaction (SOI), and low effective masses are properties that make a ma-terial desirable for spintronics, making Ge very ap-pealing in the recent years [4]. Alloying Sn with Ge is expected to increase the SOI due to the large nu-cleus of Sn and reduce the effective mass [5] mak-ing the novel CMOS compatible GeSn material system worth investigating.
T2  - International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting
CY  - 10 Nov 2025 - 13 Nov 2025, Machida, Tokyo (Japan)
Y2  - 10 Nov 2025 - 13 Nov 2025
M2  - Machida, Tokyo, Japan
LB  - PUB:(DE-HGF)6
UR  - https://juser.fz-juelich.de/record/1053139
ER  -