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@INPROCEEDINGS{Kaul:1053139,
      author       = {Kaul, Prateek and Karthein, Jan and Buchhorn, Jonas and
                      Kawano, Taizo and Usubuchi, Taisei and Ishihara, Jun and
                      Rotaru, Nicolas and Vecchio, Patrick del and Concepción
                      Díaz, Omar and Grützmacher, Detlev and Zhao, Qing-Tai and
                      Moutanabbir, Oussama and Kohda, Makoto and Schäpers, Thomas
                      and Buca, Dan Mihai},
      title        = {{C}haracterization of a two-dimensional hole gas in a
                      {G}e{S}n quantum well system},
      school       = {RWTH Aachen},
      reportid     = {FZJ-2026-01471},
      year         = {2025},
      note         = {Restricted viewing for only conference participants},
      abstract     = {Reducing energy consumption is becoming in-creasingly
                      important, especially in light of the growing energy demands
                      of AI-based computing [1]. Spin-based computing approaches,
                      such as spintronics and spin qubits, offer the potential to
                      re-duce the high energy consumption associated with
                      traditional charge-based computation [2,3]. Low nuclear
                      spins, high spin-orbit interaction (SOI), and low effective
                      masses are properties that make a ma-terial desirable for
                      spintronics, making Ge very ap-pealing in the recent years
                      [4]. Alloying Sn with Ge is expected to increase the SOI due
                      to the large nu-cleus of Sn and reduce the effective mass
                      [5] mak-ing the novel CMOS compatible GeSn material system
                      worth investigating.},
      month         = {Nov},
      date          = {2025-11-10},
      organization  = {International Conference on Silicon
                       Epitaxy and International SiGe
                       Technology and Device Meeting, Machida,
                       Tokyo (Japan), 10 Nov 2025 - 13 Nov
                       2025},
      subtyp        = {After Call},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / LASTSTEP -
                      group-IV LASer and deTectors on Si-TEchnology Platform
                      (101070208) / DFG project G:(GEPRIS)537127697 -
                      Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen
                      (537127697)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(EU-Grant)101070208 /
                      G:(GEPRIS)537127697},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/1053139},
}