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| 001 | 1053139 | ||
| 005 | 20260202140245.0 | ||
| 037 | _ | _ | |a FZJ-2026-01471 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Kaul, Prateek |0 P:(DE-Juel1)194320 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting |g ICSI/ISTDM 2025 |c Machida, Tokyo |d 2025-11-10 - 2025-11-13 |w Japan |
| 245 | _ | _ | |a Characterization of a two-dimensional hole gas in a GeSn quantum well system |
| 260 | _ | _ | |c 2025 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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| 500 | _ | _ | |a Restricted viewing for only conference participants |
| 502 | _ | _ | |c RWTH Aachen |
| 520 | _ | _ | |a Reducing energy consumption is becoming in-creasingly important, especially in light of the growing energy demands of AI-based computing [1]. Spin-based computing approaches, such as spintronics and spin qubits, offer the potential to re-duce the high energy consumption associated with traditional charge-based computation [2,3]. Low nuclear spins, high spin-orbit interaction (SOI), and low effective masses are properties that make a ma-terial desirable for spintronics, making Ge very ap-pealing in the recent years [4]. Alloying Sn with Ge is expected to increase the SOI due to the large nu-cleus of Sn and reduce the effective mass [5] mak-ing the novel CMOS compatible GeSn material system worth investigating. |
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| 536 | _ | _ | |a DFG project G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen (537127697) |0 G:(GEPRIS)537127697 |c 537127697 |x 2 |
| 650 | 2 | 7 | |a Condensed Matter Physics |0 V:(DE-MLZ)SciArea-120 |2 V:(DE-HGF) |x 0 |
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| 700 | 1 | _ | |a Karthein, Jan |0 P:(DE-Juel1)187581 |b 1 |
| 700 | 1 | _ | |a Buchhorn, Jonas |0 P:(DE-Juel1)195799 |b 2 |
| 700 | 1 | _ | |a Kawano, Taizo |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Usubuchi, Taisei |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Ishihara, Jun |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Rotaru, Nicolas |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Vecchio, Patrick del |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Concepción Díaz, Omar |0 P:(DE-Juel1)188576 |b 8 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 9 |
| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 10 |
| 700 | 1 | _ | |a Moutanabbir, Oussama |0 P:(DE-HGF)0 |b 11 |
| 700 | 1 | _ | |a Kohda, Makoto |0 P:(DE-HGF)0 |b 12 |
| 700 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 13 |
| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 14 |
| 856 | 4 | _ | |u https://iscsi.sakura.ne.jp/iscsi10/ |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/1053139/files/Characterization%20of%20two-dimensional%20hole%20gas%20in%20GeSn%20quantum%20well%20system.pdf |y Restricted |
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