Conference Presentation (After Call)

FZJ-2026-01471

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Characterization of a two-dimensional hole gas in a GeSn quantum well system

Kaul, P. (Corresponding author)FZJ* ; Karthein, J.FZJ* ; Buchhorn, J.FZJ* ; Kawano, T. ; Usubuchi, T. ; Ishihara, J. ; Rotaru, N. ; Vecchio, P. d. ; Concepción Díaz, O.FZJ* ; Grützmacher, D.FZJ* ; Zhao, Q.-T.FZJ* ; Moutanabbir, O. ; Kohda, M. ; Schäpers, T.FZJ* ; Buca, D. M.FZJ*

2025

Abstract: Reducing energy consumption is becoming in-creasingly important, especially in light of the growing energy demands of AI-based computing [1]. Spin-based computing approaches, such as spintronics and spin qubits, offer the potential to re-duce the high energy consumption associated with traditional charge-based computation [2,3]. Low nuclear spins, high spin-orbit interaction (SOI), and low effective masses are properties that make a ma-terial desirable for spintronics, making Ge very ap-pealing in the recent years [4]. Alloying Sn with Ge is expected to increase the SOI due to the large nu-cleus of Sn and reduce the effective mass [5] mak-ing the novel CMOS compatible GeSn material system worth investigating.

Keyword(s): Engineering, Industrial Materials and Processing (1st) ; Basic research (1st) ; Condensed Matter Physics (2nd)

Note: Restricted viewing for only conference participants

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208) (101070208)
3. DFG project G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen (537127697) (537127697)

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