Hauptseite > Publikationsdatenbank > Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells > print

001     1053142
005     20260202125356.0
024 7 _ |a 10.34734/FZJ-2026-01474
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037 _ _ |a FZJ-2026-01474
041 _ _ |a English
100 1 _ |a Kaul, Prateek
|0 P:(DE-Juel1)194320
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111 2 _ |a ASPIRE Workshop on Quantum and Topological Materials Date: October
|g ASPIRE2025
|c Sendai
|d 2026-10-21 - 2026-10-22
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245 _ _ |a Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells
260 _ _ |c 2025
336 7 _ |a Conference Paper
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502 _ _ |c RWTH Aachen
520 _ _ |a Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells
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536 _ _ |a LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208)
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536 _ _ |a DFG project G:(GEPRIS)537127697 - Thermoelektrische Eigenschaften von SiGeSn-Mikrobauelementen (537127697)
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650 2 7 |a Condensed Matter Physics
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650 1 7 |a Engineering, Industrial Materials and Processing
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700 1 _ |a Karthein, Jan
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700 1 _ |a Buchhorn, Jonas
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700 1 _ |a Kawano, Taizo
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700 1 _ |a Usubuchi, Taisei
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700 1 _ |a Ishihara, Jun
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700 1 _ |a Rotaru, Nicolas
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Zhao, Qing-Tai
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700 1 _ |a Moutanabbir, Oussama
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700 1 _ |a Kohda, Makoto
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700 1 _ |a Schäpers, Thomas
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700 1 _ |a Buca, Dan
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856 4 _ |u https://juser.fz-juelich.de/record/1053142/files/Abstract_Prateek-ASPIRE-Workshop-Sendai-2025.pdf
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