%0 Conference Paper
%A Devaiya, A. J.
%A Concepción, O.
%A Liu, Teren
%A Seidel, L.
%A Bae, J. H.
%A Tiedemann, A. T.
%A Mathur, S.
%A Oehme, M.
%A Capellini, G.
%A Grützmacher, D.
%A Buca, D.
%T Advanced CSiGeSn heterostructures for photonic applications
%I University of Cologne
%M FZJ-2026-01484
%D 2025
%X Group IV materials provide a foundational platform for advancing silicon-based photonics applications. Especially, GeSn-based Group-IV alloys have demonstrated a direct band gap with higher electron mobility, which is beneficial for photonic integrated chips (PIC) and spintronic fields with complementary metal-oxide semiconductor (CMOS) compatibility.[1] A recent breakthrough in the Si photonics field was the demonstration of continuous-wave, electrically pumped lasing based on advanced SiGeSn/GeSn multi-quantum well structures (MQWs).[2] In addition, theoretical calculations predict that C substitution into the Ge and GeSn lattice further improves the fundamental bandgap directness, enhancing laser performance.[3] Moreover, incorporating C as well as Si and Sn into Ge allowed a large tunability of the light emission in the Mid-infrared range of 2-5 μm. However, the low solid solubility and large lattice mismatch mostly limit the substitutional incorporation of C into the Ge diamond lattice.
%B the 11th NRW Nano Conference
%C 30 Sep 2025 - 1 Oct 2025, Dortmund (Germany)
Y2 30 Sep 2025 - 1 Oct 2025
M2 Dortmund, Germany
%F PUB:(DE-HGF)6
%9 Conference Presentation
%R 10.34734/FZJ-2026-01484
%U https://juser.fz-juelich.de/record/1053152