TY  - CONF
AU  - Devaiya, A. J.
AU  - Concepción, O.
AU  - Liu, Teren
AU  - Seidel, L.
AU  - Bae, J. H.
AU  - Tiedemann, A. T.
AU  - Mathur, S.
AU  - Oehme, M.
AU  - Capellini, G.
AU  - Grützmacher, D.
AU  - Buca, D.
TI  - Advanced CSiGeSn heterostructures for photonic applications
PB  - University of Cologne
M1  - FZJ-2026-01484
PY  - 2025
AB  - Group IV materials provide a foundational platform for advancing silicon-based photonics applications. Especially, GeSn-based Group-IV alloys have demonstrated a direct band gap with higher electron mobility, which is beneficial for photonic integrated chips (PIC) and spintronic fields with complementary metal-oxide semiconductor (CMOS) compatibility.[1] A recent breakthrough in the Si photonics field was the demonstration of continuous-wave, electrically pumped lasing based on advanced SiGeSn/GeSn multi-quantum well structures (MQWs).[2] In addition, theoretical calculations predict that C substitution into the Ge and GeSn lattice further improves the fundamental bandgap directness, enhancing laser performance.[3] Moreover, incorporating C as well as Si and Sn into Ge allowed a large tunability of the light emission in the Mid-infrared range of 2-5 μm. However, the low solid solubility and large lattice mismatch mostly limit the substitutional incorporation of C into the Ge diamond lattice.
T2  - the 11th NRW Nano Conference
CY  - 30 Sep 2025 - 1 Oct 2025, Dortmund (Germany)
Y2  - 30 Sep 2025 - 1 Oct 2025
M2  - Dortmund, Germany
LB  - PUB:(DE-HGF)6
DO  - DOI:10.34734/FZJ-2026-01484
UR  - https://juser.fz-juelich.de/record/1053152
ER  -