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@INPROCEEDINGS{Devaiya:1053152,
      author       = {Devaiya, A. J. and Concepción, O. and Liu, Teren and
                      Seidel, L. and Bae, J. H. and Tiedemann, A. T. and Mathur,
                      S. and Oehme, M. and Capellini, G. and Grützmacher, D. and
                      Buca, D.},
      title        = {{A}dvanced {CS}i{G}e{S}n heterostructures for photonic
                      applications},
      school       = {University of Cologne},
      reportid     = {FZJ-2026-01484},
      year         = {2025},
      abstract     = {Group IV materials provide a foundational platform for
                      advancing silicon-based photonics applications. Especially,
                      GeSn-based Group-IV alloys have demonstrated a direct band
                      gap with higher electron mobility, which is beneficial for
                      photonic integrated chips (PIC) and spintronic fields with
                      complementary metal-oxide semiconductor (CMOS)
                      compatibility.[1] A recent breakthrough in the Si photonics
                      field was the demonstration of continuous-wave, electrically
                      pumped lasing based on advanced SiGeSn/GeSn multi-quantum
                      well structures (MQWs).[2] In addition, theoretical
                      calculations predict that C substitution into the Ge and
                      GeSn lattice further improves the fundamental bandgap
                      directness, enhancing laser performance.[3] Moreover,
                      incorporating C as well as Si and Sn into Ge allowed a large
                      tunability of the light emission in the Mid-infrared range
                      of 2-5 μm. However, the low solid solubility and large
                      lattice mismatch mostly limit the substitutional
                      incorporation of C into the Ge diamond lattice.},
      month         = {Sep},
      date          = {2025-09-30},
      organization  = {the 11th NRW Nano Conference, Dortmund
                       (Germany), 30 Sep 2025 - 1 Oct 2025},
      subtyp        = {Other},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / LASTSTEP -
                      group-IV LASer and deTectors on Si-TEchnology Platform
                      (101070208)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(EU-Grant)101070208},
      typ          = {PUB:(DE-HGF)6},
      doi          = {10.34734/FZJ-2026-01484},
      url          = {https://juser.fz-juelich.de/record/1053152},
}