Gast ::
| Hauptseite > Publikationsdatenbank > Advanced CSiGeSn heterostructures for photonic applications > print |
| Hauptseite > Publikationsdatenbank > Advanced CSiGeSn heterostructures for photonic applications > print |
| 001 | 1053152 | ||
| 005 | 20260202125356.0 | ||
| 024 | 7 | _ | |a 10.34734/FZJ-2026-01484 |2 datacite_doi |
| 037 | _ | _ | |a FZJ-2026-01484 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Devaiya, A. J. |0 P:(DE-Juel1)201941 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a the 11th NRW Nano Conference |c Dortmund |d 2025-09-30 - 2025-10-01 |w Germany |
| 245 | _ | _ | |a Advanced CSiGeSn heterostructures for photonic applications |
| 260 | _ | _ | |c 2025 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1770031738_2135 |2 PUB:(DE-HGF) |x Other |
| 502 | _ | _ | |c University of Cologne |
| 520 | _ | _ | |a Group IV materials provide a foundational platform for advancing silicon-based photonics applications. Especially, GeSn-based Group-IV alloys have demonstrated a direct band gap with higher electron mobility, which is beneficial for photonic integrated chips (PIC) and spintronic fields with complementary metal-oxide semiconductor (CMOS) compatibility.[1] A recent breakthrough in the Si photonics field was the demonstration of continuous-wave, electrically pumped lasing based on advanced SiGeSn/GeSn multi-quantum well structures (MQWs).[2] In addition, theoretical calculations predict that C substitution into the Ge and GeSn lattice further improves the fundamental bandgap directness, enhancing laser performance.[3] Moreover, incorporating C as well as Si and Sn into Ge allowed a large tunability of the light emission in the Mid-infrared range of 2-5 μm. However, the low solid solubility and large lattice mismatch mostly limit the substitutional incorporation of C into the Ge diamond lattice. |
| 536 | _ | _ | |a 5234 - Emerging NC Architectures (POF4-523) |0 G:(DE-HGF)POF4-5234 |c POF4-523 |f POF IV |x 0 |
| 536 | _ | _ | |a LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208) |0 G:(EU-Grant)101070208 |c 101070208 |f HORIZON-CL4-2021-DIGITAL-EMERGING-01 |x 1 |
| 650 | 2 | 7 | |a Materials Science |0 V:(DE-MLZ)SciArea-180 |2 V:(DE-HGF) |x 0 |
| 650 | 1 | 7 | |a Basic research |0 V:(DE-MLZ)GC-2004-2016 |2 V:(DE-HGF) |x 0 |
| 700 | 1 | _ | |a Concepción, O. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Liu, Teren |0 P:(DE-Juel1)186980 |b 2 |
| 700 | 1 | _ | |a Seidel, L. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Bae, J. H. |0 P:(DE-Juel1)177006 |b 4 |
| 700 | 1 | _ | |a Tiedemann, A. T. |0 P:(DE-Juel1)128639 |b 5 |
| 700 | 1 | _ | |a Mathur, S. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Oehme, M. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Capellini, G. |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Grützmacher, D. |0 P:(DE-Juel1)125588 |b 9 |
| 700 | 1 | _ | |a Buca, D. |0 P:(DE-Juel1)125569 |b 10 |
| 856 | 4 | _ | |u https://www.nanoconference.de/etn/11th-nrw-nano-conference/ |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/1053152/files/20250731%20NRW_Nano_Conference_Devaiya.pdf |y OpenAccess |
| 909 | C | O | |o oai:juser.fz-juelich.de:1053152 |p openaire |p open_access |p VDB |p driver |p ec_fundedresources |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)201941 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)186980 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)177006 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)128639 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 9 |6 P:(DE-Juel1)125588 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 10 |6 P:(DE-Juel1)125569 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Natural, Artificial and Cognitive Information Processing |1 G:(DE-HGF)POF4-520 |0 G:(DE-HGF)POF4-523 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Neuromorphic Computing and Network Dynamics |9 G:(DE-HGF)POF4-5234 |x 0 |
| 915 | _ | _ | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | 1 | _ | |a FullTexts |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|