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| 001 | 1053152 | ||
| 005 | 20260202125356.0 | ||
| 024 | 7 | _ | |a 10.34734/FZJ-2026-01484 |2 datacite_doi |
| 037 | _ | _ | |a FZJ-2026-01484 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Devaiya, A. J. |0 P:(DE-Juel1)201941 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a the 11th NRW Nano Conference |c Dortmund |d 2025-09-30 - 2025-10-01 |w Germany |
| 245 | _ | _ | |a Advanced CSiGeSn heterostructures for photonic applications |
| 260 | _ | _ | |c 2025 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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| 502 | _ | _ | |c University of Cologne |
| 520 | _ | _ | |a Group IV materials provide a foundational platform for advancing silicon-based photonics applications. Especially, GeSn-based Group-IV alloys have demonstrated a direct band gap with higher electron mobility, which is beneficial for photonic integrated chips (PIC) and spintronic fields with complementary metal-oxide semiconductor (CMOS) compatibility.[1] A recent breakthrough in the Si photonics field was the demonstration of continuous-wave, electrically pumped lasing based on advanced SiGeSn/GeSn multi-quantum well structures (MQWs).[2] In addition, theoretical calculations predict that C substitution into the Ge and GeSn lattice further improves the fundamental bandgap directness, enhancing laser performance.[3] Moreover, incorporating C as well as Si and Sn into Ge allowed a large tunability of the light emission in the Mid-infrared range of 2-5 μm. However, the low solid solubility and large lattice mismatch mostly limit the substitutional incorporation of C into the Ge diamond lattice. |
| 536 | _ | _ | |a 5234 - Emerging NC Architectures (POF4-523) |0 G:(DE-HGF)POF4-5234 |c POF4-523 |f POF IV |x 0 |
| 536 | _ | _ | |a LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208) |0 G:(EU-Grant)101070208 |c 101070208 |f HORIZON-CL4-2021-DIGITAL-EMERGING-01 |x 1 |
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| 700 | 1 | _ | |a Concepción, O. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Liu, Teren |0 P:(DE-Juel1)186980 |b 2 |
| 700 | 1 | _ | |a Seidel, L. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Bae, J. H. |0 P:(DE-Juel1)177006 |b 4 |
| 700 | 1 | _ | |a Tiedemann, A. T. |0 P:(DE-Juel1)128639 |b 5 |
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| 700 | 1 | _ | |a Oehme, M. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Capellini, G. |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Grützmacher, D. |0 P:(DE-Juel1)125588 |b 9 |
| 700 | 1 | _ | |a Buca, D. |0 P:(DE-Juel1)125569 |b 10 |
| 856 | 4 | _ | |u https://www.nanoconference.de/etn/11th-nrw-nano-conference/ |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/1053152/files/20250731%20NRW_Nano_Conference_Devaiya.pdf |y OpenAccess |
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