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| Home > Publications database > Ge Epitaxy on Si (001) using Halide-based Chemical Vapor Deposition |
| Home > Publications database > Ge Epitaxy on Si (001) using Halide-based Chemical Vapor Deposition |
| Conference Presentation (Other) | FZJ-2026-01495 |
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2025
Abstract: Germanium (Ge) precursors are critical for enabling high-quality epitaxial Ge films using chemical vapor deposition (CVD) for advanced electronics, photonics, and sensing applications. To date, epitaxial Ge growth has typically relied on germane (GeH₄) and its higher-order hydride derivatives. These precursors are, however, relatively expensive and often limited by a lower growth rate (GR) on Si substrates.[1] This work investigates the kinetics of Ge epitaxy on 200 mm Si(001) wafers using GeCl4 in two different reactor designs: i) a metallic water-cooled reactor with showerhead gas delivery working at a total reactor pressure (preactor) of 60 mbar - later referred to as vertical reactor; ii) a classical air-cooled horizontal quartz reactor with multiport gas inlet delivery where preactor can be varied between 13 and 1013 mbar – later called horizontal reactor. The investigations are done in two different nominal growth temperature (Tg) regimes; 600-725°C for the vertical reactor, and 450-850°C for the horizontal reactor. Additionally, Ge selective epitaxial growth (SEG) is demonstrated on patterned substrates, highlighting the potential of such a process for device applications.
Keyword(s): Chemical Reactions and Advanced Materials (1st) ; Chemistry (2nd)
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