%0 Conference Paper
%A Devaiya, Ambrishkumar J.
%A Concepcion, Omar
%A Fischer, Thomas
%A Tiedemann, Andreas
%A Capellini, Giovanni
%A Mathur, Sanjay
%A Grützmacher, Detlev
%A Buca, Dan
%T CSiGeSn Epitaxy: Future Isovalent Isomorphism in Group-IV Materials
%I University of Cologne
%M FZJ-2026-01505
%D 2025
%X Group-IV materials constitute the foundational platform for advancing silicon-based photonics, spintronic, and energy technologies.[1] Recent breakthrough in the field includes the demonstration of continues-wave electrically pumped lasing based on advanced (Si)GeSn/GeSn MQWs.[2] Theoretical calculations predicts that the C substitution into Ge lattice even enhance the directness of band gap leading to laser performance improvement.[3] In this study, we address the growth aspects of ternary and quaternary Group-IV alloys, in comparison with GeSn epitaxy, which serve as benchmark. Additionally, an unconventional carbon precursor - CBr4 is introduced and its chemical influence on onset Sn alloying for CGeSn alloys is presented. Later, the Si induce defect engineering to compensate the effect of C alloying on strain relaxation in diamond cubic lattice during (Si)GeSn epitaxy is studied.
%B 16th International WorkShop on New Group IV Semiconductor Nanoelectronics
%C 17 Nov 2025 - 18 Nov 2025, Sendai (Japan)
Y2 17 Nov 2025 - 18 Nov 2025
M2 Sendai, Japan
%F PUB:(DE-HGF)6
%9 Conference Presentation
%R 10.34734/FZJ-2026-01505
%U https://juser.fz-juelich.de/record/1053173