TY  - CONF
AU  - Devaiya, Ambrishkumar J.
AU  - Concepcion, Omar
AU  - Fischer, Thomas
AU  - Tiedemann, Andreas
AU  - Capellini, Giovanni
AU  - Mathur, Sanjay
AU  - Grützmacher, Detlev
AU  - Buca, Dan
TI  - CSiGeSn Epitaxy: Future Isovalent Isomorphism in Group-IV Materials
PB  - University of Cologne
M1  - FZJ-2026-01505
PY  - 2025
AB  - Group-IV materials constitute the foundational platform for advancing silicon-based photonics, spintronic, and energy technologies.[1] Recent breakthrough in the field includes the demonstration of continues-wave electrically pumped lasing based on advanced (Si)GeSn/GeSn MQWs.[2] Theoretical calculations predicts that the C substitution into Ge lattice even enhance the directness of band gap leading to laser performance improvement.[3] In this study, we address the growth aspects of ternary and quaternary Group-IV alloys, in comparison with GeSn epitaxy, which serve as benchmark. Additionally, an unconventional carbon precursor - CBr4 is introduced and its chemical influence on onset Sn alloying for CGeSn alloys is presented. Later, the Si induce defect engineering to compensate the effect of C alloying on strain relaxation in diamond cubic lattice during (Si)GeSn epitaxy is studied.
T2  - 16th International WorkShop on New Group IV Semiconductor Nanoelectronics
CY  - 17 Nov 2025 - 18 Nov 2025, Sendai (Japan)
Y2  - 17 Nov 2025 - 18 Nov 2025
M2  - Sendai, Japan
LB  - PUB:(DE-HGF)6
DO  - DOI:10.34734/FZJ-2026-01505
UR  - https://juser.fz-juelich.de/record/1053173
ER  -