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@INPROCEEDINGS{Devaiya:1053173,
      author       = {Devaiya, Ambrishkumar J. and Concepcion, Omar and Fischer,
                      Thomas and Tiedemann, Andreas and Capellini, Giovanni and
                      Mathur, Sanjay and Grützmacher, Detlev and Buca, Dan},
      title        = {{CS}i{G}e{S}n {E}pitaxy: {F}uture {I}sovalent {I}somorphism
                      in {G}roup-{IV} {M}aterials},
      school       = {University of Cologne},
      reportid     = {FZJ-2026-01505},
      year         = {2025},
      abstract     = {Group-IV materials constitute the foundational platform for
                      advancing silicon-based photonics, spintronic, and energy
                      technologies.[1] Recent breakthrough in the field includes
                      the demonstration of continues-wave electrically pumped
                      lasing based on advanced (Si)GeSn/GeSn MQWs.[2] Theoretical
                      calculations predicts that the C substitution into Ge
                      lattice even enhance the directness of band gap leading to
                      laser performance improvement.[3] In this study, we address
                      the growth aspects of ternary and quaternary Group-IV
                      alloys, in comparison with GeSn epitaxy, which serve as
                      benchmark. Additionally, an unconventional carbon precursor
                      - CBr4 is introduced and its chemical influence on onset Sn
                      alloying for CGeSn alloys is presented. Later, the Si induce
                      defect engineering to compensate the effect of C alloying on
                      strain relaxation in diamond cubic lattice during (Si)GeSn
                      epitaxy is studied.},
      month         = {Nov},
      date          = {2025-11-17},
      organization  = {16th International WorkShop on New
                       Group IV Semiconductor Nanoelectronics,
                       Sendai (Japan), 17 Nov 2025 - 18 Nov
                       2025},
      subtyp        = {Other},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / LASTSTEP -
                      group-IV LASer and deTectors on Si-TEchnology Platform
                      (101070208)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(EU-Grant)101070208},
      typ          = {PUB:(DE-HGF)6},
      doi          = {10.34734/FZJ-2026-01505},
      url          = {https://juser.fz-juelich.de/record/1053173},
}