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001     1053173
005     20260203202226.0
024 7 _ |a 10.34734/FZJ-2026-01505
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037 _ _ |a FZJ-2026-01505
041 _ _ |a English
100 1 _ |a Devaiya, Ambrishkumar J.
|0 P:(DE-Juel1)201941
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111 2 _ |a 16th International WorkShop on New Group IV Semiconductor Nanoelectronics
|c Sendai
|d 2025-11-17 - 2025-11-18
|w Japan
245 _ _ |a CSiGeSn Epitaxy: Future Isovalent Isomorphism in Group-IV Materials
260 _ _ |c 2025
336 7 _ |a Conference Paper
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502 _ _ |c University of Cologne
520 _ _ |a Group-IV materials constitute the foundational platform for advancing silicon-based photonics, spintronic, and energy technologies.[1] Recent breakthrough in the field includes the demonstration of continues-wave electrically pumped lasing based on advanced (Si)GeSn/GeSn MQWs.[2] Theoretical calculations predicts that the C substitution into Ge lattice even enhance the directness of band gap leading to laser performance improvement.[3] In this study, we address the growth aspects of ternary and quaternary Group-IV alloys, in comparison with GeSn epitaxy, which serve as benchmark. Additionally, an unconventional carbon precursor - CBr4 is introduced and its chemical influence on onset Sn alloying for CGeSn alloys is presented. Later, the Si induce defect engineering to compensate the effect of C alloying on strain relaxation in diamond cubic lattice during (Si)GeSn epitaxy is studied.
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536 _ _ |a LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208)
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700 1 _ |a Concepcion, Omar
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700 1 _ |a Fischer, Thomas
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700 1 _ |a Tiedemann, Andreas
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700 1 _ |a Capellini, Giovanni
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700 1 _ |a Mathur, Sanjay
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Buca, Dan
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|e Corresponding author
856 4 _ |u https://www.murota.riec.tohoku.ac.jp/EI4GroupIV-WS2025/
856 4 _ |u https://juser.fz-juelich.de/record/1053173/files/EI14GroupIV_CSiGeSn%20Epitaxy_FZ%20Juelich.pdf
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