% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Steiner:1053955,
      author       = {Steiner, Corinne and Rahmel, Rebecca and Volmer, Frank and
                      Windisch, Rika and Janssen, Lars H. and Pesch, Patricia and
                      Watanabe, Kenji and Taniguchi, Takashi and Libisch, Florian
                      and Beschoten, Bernd and Stampfer, Christoph and Kurzmann,
                      Annika},
      title        = {{C}urrent-induced brightening of vacancy-related emitters
                      in hexagonal boron nitride},
      journal      = {Physical review research},
      volume       = {7},
      number       = {3},
      issn         = {2643-1564},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2026-01632},
      pages        = {L032037},
      year         = {2025},
      abstract     = {We perform photoluminescence measurements on
                      vacancy-related emitters in hexagonal boron nitride (hBN)
                      that are notorious for their low quantum yields. The gating
                      of these emitters via few-layer graphene electrodes reveals
                      a reproducible, gate-dependent brightening of the emitter,
                      which coincides with a change in the direction of the
                      simultaneously measured leakage current across the hBN
                      layers. At the same time, we observe that the relative
                      increase of the brightening effect scales linearly with the
                      intensity of the excitation laser. Both observations can be
                      explained in terms of a photo-assisted electroluminescence
                      effect. Interestingly, emitters can also show the opposite
                      behavior, i.e., a decrease in emitter intensity that depends
                      on the gate leakage current. We explain these two opposing
                      behaviors by different concentrations of donor and acceptor
                      states in the hBN and show that precise control of the
                      doping of hBN is necessary to gain control over the
                      brightness of vacancy-related emitters by electrical means.
                      Our findings contribute to a deeper understanding of
                      vacancy-related defect emitters in hBN that is necessary to
                      make use of their potential in quantum information
                      processing.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5222 - Exploratory Qubits (POF4-522) / DFG project
                      G:(GEPRIS)390534769 - EXC 2004: Materie und Licht für
                      Quanteninformation (ML4Q) (390534769)},
      pid          = {G:(DE-HGF)POF4-5222 / G:(GEPRIS)390534769},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1103/cd62-5hq8},
      url          = {https://juser.fz-juelich.de/record/1053955},
}