Home > Publications database > High entropy oxides based on (Zr, Hf, Nb, Ta, Mo, W)Ox: From powders to resistively switching RRAM devices
 
Conference Presentation (Other) FZJ-2026-04668
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
High entropy oxides based on (Zr, Hf, Nb, Ta, Mo, W)Ox: From powders to resistively switching RRAM devices

 ;  ;  ;  ;  ;  ;

2026

10th International Conference on Sintering, SINTERING 2026, AachenAachen, Germany, 1 Sep 2026 - 4 Sep 20262026-09-012026-09-04

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA Institut Green IT (PGI-10)
  3. JARA-FIT (JARA-FIT)
  4. Werkstoffsynthese und Herstellungsverfahren (IMD-2)
Research Program(s):
  1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

Appears in the scientific report 2026
Click to display QR Code for this record

The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > IMD > IMD-2
Institute Collections > PGI > PGI-10
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2026-09-30, last modified 2026-09-30
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2609-1-g9fdb552
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English