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000010832 0247_ $$2DOI$$a10.1088/0953-2048/23/9/095007
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000010832 084__ $$2WoS$$aPhysics, Applied
000010832 084__ $$2WoS$$aPhysics, Condensed Matter
000010832 1001_ $$0P:(DE-Juel1)VDB59925$$aWeides, M.$$b0$$uFZJ
000010832 245__ $$aCritical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer
000010832 260__ $$aBristol$$bIOP Publ.$$c2010
000010832 300__ $$a095007
000010832 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000010832 440_0 $$05665$$aSuperconductor Science and Technology$$v23$$x0953-2048$$y9
000010832 500__ $$aSupport via DFG (SFB/TRR-21, WE 4359/1-1) and the AvH Foundation (MW) is gratefully acknowledged.
000010832 520__ $$aWe present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses d(1) and d(2) in both halves were varied to obtain different combinations of positive and negative critical current densities j(c), 1 and j(c), 2. The measured dependences of the critical current on applied magnetic field can be well described by a model which takes into account different critical current densities (obtained from reference junctions) and different net magnetization of the multidomain ferromagnetic layer in both halves.
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000010832 7001_ $$0P:(DE-HGF)0$$aPeralagu, U.$$b1
000010832 7001_ $$0P:(DE-Juel1)VDB3107$$aKohlstedt, H.$$b2$$uFZJ
000010832 7001_ $$0P:(DE-HGF)0$$aPfeifer, J.$$b3
000010832 7001_ $$0P:(DE-HGF)0$$aKemmler, M.$$b4
000010832 7001_ $$0P:(DE-HGF)0$$aGürlich, C.$$b5
000010832 7001_ $$0P:(DE-HGF)0$$aGoldobin, E.$$b6
000010832 7001_ $$0P:(DE-HGF)0$$aKoelle, D.$$b7
000010832 7001_ $$0P:(DE-HGF)0$$aKleiner, R.$$b8
000010832 773__ $$0PERI:(DE-600)1361475-7$$a10.1088/0953-2048/23/9/095007$$gVol. 23, p. 095007$$p095007$$q23<095007$$tSuperconductor science and technology$$v23$$x0953-2048$$y2010
000010832 8567_ $$uhttp://dx.doi.org/10.1088/0953-2048/23/9/095007
000010832 909CO $$ooai:juser.fz-juelich.de:10832$$pVDB
000010832 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000010832 915__ $$0StatID:(DE-HGF)0020$$aNo peer review
000010832 9141_ $$y2010
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000010832 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
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