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Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)

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2010

17th International Conference on Ion Beam Modification of Materials, IBMM2010
Seminar, Montreal, CanadaMontreal, Canada, 22 Aug 20102010-08-22


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
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JARA > JARA > JARA-JARA\-FIT
Document types > Presentations > Poster
Institute Collections > PGI > PGI-9
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 Record created 2012-11-13, last modified 2018-02-08
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