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000111841 1001_ $$0P:(DE-HGF)0$$aSachenko, A.V.$$b0
000111841 245__ $$aMechanism of contact resistance formation in ohmic contacts with high dislocation density
000111841 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
000111841 300__ $$a083701
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000111841 440_0 $$03051$$aJournal of Applied Physics$$v111$$x0021-8979$$y8
000111841 500__ $$3POF3_Assignment on 2016-02-29
000111841 500__ $$aThe authors at ISP acknowledge financial support from the National Academy of Sciences of Ukraine (program "Fundamental problems of nanostructured systems, nanomaterials and nanotechnology") and State program of Ukraine "Nanotechnology and nanomaterials."
000111841 520__ $$aA new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702850]
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000111841 7001_ $$0P:(DE-HGF)0$$aBelyaev, A.E.$$b1
000111841 7001_ $$0P:(DE-HGF)0$$aBoltovets, N.S.$$b2
000111841 7001_ $$0P:(DE-HGF)0$$aKonakova, R.V.$$b3
000111841 7001_ $$0P:(DE-HGF)0$$aKudryk, Ya.Ya$$b4
000111841 7001_ $$0P:(DE-HGF)0$$aNovitskii, S.V.$$b5
000111841 7001_ $$0P:(DE-HGF)0$$aSheremet, V.N.$$b6
000111841 7001_ $$0P:(DE-Juel1)VDB76184$$aLi, J.$$b7$$uFZJ
000111841 7001_ $$0P:(DE-Juel1)128738$$aVitusevich, S.A.$$b8$$uFZJ
000111841 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.3702850$$gVol. 111, p. 083701$$p083701$$q111<083701$$tJournal of applied physics$$v111$$x0021-8979$$y2012
000111841 8567_ $$uhttp://dx.doi.org/10.1063/1.3702850
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