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@ARTICLE{Sachenko:111841,
      author       = {Sachenko, A.V. and Belyaev, A.E. and Boltovets, N.S. and
                      Konakova, R.V. and Kudryk, Ya.Ya and Novitskii, S.V. and
                      Sheremet, V.N. and Li, J. and Vitusevich, S.A.},
      title        = {{M}echanism of contact resistance formation in ohmic
                      contacts with high dislocation density},
      journal      = {Journal of applied physics},
      volume       = {111},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-111841},
      pages        = {083701},
      year         = {2012},
      note         = {The authors at ISP acknowledge financial support from the
                      National Academy of Sciences of Ukraine (program
                      "Fundamental problems of nanostructured systems,
                      nanomaterials and nanotechnology") and State program of
                      Ukraine "Nanotechnology and nanomaterials."},
      abstract     = {A new mechanism of contact resistance formation in ohmic
                      contacts with high dislocation density is proposed. Its
                      specific feature is the appearance of a characteristic
                      region where the contact resistance increases with
                      temperature. According to the mechanism revealed, the
                      current flowing through the metal shunts associated with
                      dislocations is determined by electron diffusion. It is
                      shown that current flows through the semiconductor
                      near-surface regions where electrons accumulate. A feature
                      of the mechanism is the realization of ohmic contact
                      irrespective of the relation between the contact and bulk
                      resistances. The theory is proved for contacts formed to
                      III-V semiconductor materials as well as silicon-based
                      materials. A reasonable agreement between theory and
                      experimental results is obtained. (C) 2012 American
                      Institute of Physics. [http://dx.doi.org/10.1063/1.3702850]},
      keywords     = {J (WoSType)},
      cin          = {ICS-8 / JARA-FIT / PGI-8},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ICS-8-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-8-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      BioSoft: Makromolekulare Systeme und biologische
                      Informationsverarbeitung},
      pid          = {G:(DE-Juel1)FUEK412 / G:(DE-Juel1)FUEK505},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000303598800052},
      doi          = {10.1063/1.3702850},
      url          = {https://juser.fz-juelich.de/record/111841},
}