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| Hauptseite > Publikationsdatenbank > Mechanism of contact resistance formation in ohmic contacts with high dislocation density > print |
| Hauptseite > Publikationsdatenbank > Mechanism of contact resistance formation in ohmic contacts with high dislocation density > print |
| 001 | 111841 | ||
| 005 | 20240619091046.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1063/1.3702850 |
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| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Sachenko, A.V. |b 0 |
| 245 | _ | _ | |a Mechanism of contact resistance formation in ohmic contacts with high dislocation density |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2012 |
| 300 | _ | _ | |a 083701 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 440 | _ | 0 | |0 3051 |a Journal of Applied Physics |v 111 |x 0021-8979 |y 8 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a The authors at ISP acknowledge financial support from the National Academy of Sciences of Ukraine (program "Fundamental problems of nanostructured systems, nanomaterials and nanotechnology") and State program of Ukraine "Nanotechnology and nanomaterials." |
| 520 | _ | _ | |a A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702850] |
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| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Belyaev, A.E. |b 1 |
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| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Konakova, R.V. |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Kudryk, Ya.Ya |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Novitskii, S.V. |b 5 |
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| 773 | _ | _ | |0 PERI:(DE-600)1476463-5 |a 10.1063/1.3702850 |g Vol. 111, p. 083701 |p 083701 |q 111<083701 |t Journal of applied physics |v 111 |x 0021-8979 |y 2012 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3702850 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/111841/files/FZJ-111841.pdf |y Published under German "Allianz" Licensing conditions on 2012-04-16. Available in OpenAccess from 2012-04-16 |z Published final document. |
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