%0 Journal Article
%A Zhao, Q.T.
%A Yu, W.J.
%A Zhang, B.
%A Schmidt, M.
%A Richter, S.
%A Buca, D.
%A Hartmann, J.-M.
%A Lupták, R.
%A Fox, A.
%A Bourdelle, K.K.
%A Mantl, S.
%T Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
%J Solid state electronics
%V 74
%@ 0038-1101
%C Oxford [u.a.]
%I Pergamon, Elsevier Science
%M PreJuSER-111885
%P 97-101
%D 2012
%Z This work was financially supported by the EU project STEEPER.
%X We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0 5 source. The device shows good performance with an average subthreshold swing S of 80 mV/dec over a drain current range of more than 3 orders of magnitude. We observed that the on-current increases exponentially with the back gate voltage. At a back gate voltage of 8 V. the on-current was enhanced by a factor of 1.6. The back gate also improves the on/off current ratio. Low temperature measurements show a slightly temperature dependent S. characteristic for a tunneling dominated device. (c) 2012 Elsevier Ltd. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000305728600017
%R 10.1016/j.sse.2012.04.018
%U https://juser.fz-juelich.de/record/111885