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000111885 0247_ $$2DOI$$a10.1016/j.sse.2012.04.018
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000111885 084__ $$2WoS$$aEngineering, Electrical & Electronic
000111885 084__ $$2WoS$$aPhysics, Applied
000111885 084__ $$2WoS$$aPhysics, Condensed Matter
000111885 1001_ $$0P:(DE-Juel1)VDB97138$$aZhao, Q.T.$$b0$$uFZJ
000111885 245__ $$aTunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
000111885 260__ $$aOxford [u.a.]$$bPergamon, Elsevier Science$$c2012
000111885 300__ $$a97-101
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000111885 440_0 $$06634$$aSolid-State Electronics$$v74$$x0038-1101$$yS1
000111885 500__ $$3POF3_Assignment on 2016-02-29
000111885 500__ $$aThis work was financially supported by the EU project STEEPER.
000111885 520__ $$aWe report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0 5 source. The device shows good performance with an average subthreshold swing S of 80 mV/dec over a drain current range of more than 3 orders of magnitude. We observed that the on-current increases exponentially with the back gate voltage. At a back gate voltage of 8 V. the on-current was enhanced by a factor of 1.6. The back gate also improves the on/off current ratio. Low temperature measurements show a slightly temperature dependent S. characteristic for a tunneling dominated device. (c) 2012 Elsevier Ltd. All rights reserved.
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000111885 65320 $$2Author$$aTunnel FET
000111885 65320 $$2Author$$aStrained Si
000111885 65320 $$2Author$$aSubthreshold swing
000111885 65320 $$2Author$$aSiGe
000111885 7001_ $$0P:(DE-Juel1)VDB101969$$aYu, W.J.$$b1$$uFZJ
000111885 7001_ $$0P:(DE-Juel1)VDB83419$$aZhang, B.$$b2$$uFZJ
000111885 7001_ $$0P:(DE-Juel1)VDB8227$$aSchmidt, M.$$b3$$uFZJ
000111885 7001_ $$0P:(DE-Juel1)VDB64182$$aRichter, S.$$b4$$uFZJ
000111885 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b5$$uFZJ
000111885 7001_ $$0P:(DE-HGF)0$$aHartmann, J.-M.$$b6
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000111885 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b10$$uFZJ
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