TY  - JOUR
AU  - Zhao, Q.T.
AU  - Yu, W.J.
AU  - Zhang, B.
AU  - Schmidt, M.
AU  - Richter, S.
AU  - Buca, D.
AU  - Hartmann, J.-M.
AU  - Lupták, R.
AU  - Fox, A.
AU  - Bourdelle, K.K.
AU  - Mantl, S.
TI  - Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
JO  - Solid state electronics
VL  - 74
SN  - 0038-1101
CY  - Oxford [u.a.]
PB  - Pergamon, Elsevier Science
M1  - PreJuSER-111885
SP  - 97-101
PY  - 2012
N1  - This work was financially supported by the EU project STEEPER.
AB  - We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0 5 source. The device shows good performance with an average subthreshold swing S of 80 mV/dec over a drain current range of more than 3 orders of magnitude. We observed that the on-current increases exponentially with the back gate voltage. At a back gate voltage of 8 V. the on-current was enhanced by a factor of 1.6. The back gate also improves the on/off current ratio. Low temperature measurements show a slightly temperature dependent S. characteristic for a tunneling dominated device. (c) 2012 Elsevier Ltd. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000305728600017
DO  - DOI:10.1016/j.sse.2012.04.018
UR  - https://juser.fz-juelich.de/record/111885
ER  -