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@ARTICLE{Zhao:111885,
      author       = {Zhao, Q.T. and Yu, W.J. and Zhang, B. and Schmidt, M. and
                      Richter, S. and Buca, D. and Hartmann, J.-M. and Lupták, R.
                      and Fox, A. and Bourdelle, K.K. and Mantl, S.},
      title        = {{T}unneling field-effect transistor with a strained {S}i
                      channel and a {S}i0.5{G}e0.5 source},
      journal      = {Solid state electronics},
      volume       = {74},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {PreJuSER-111885},
      pages        = {97-101},
      year         = {2012},
      note         = {This work was financially supported by the EU project
                      STEEPER.},
      abstract     = {We report on n-channel tunneling field-effect transistors
                      (TFET) with a tensile strained Si channel and a
                      compressively strained Si0.5Ge0 5 source. The device shows
                      good performance with an average subthreshold swing S of 80
                      mV/dec over a drain current range of more than 3 orders of
                      magnitude. We observed that the on-current increases
                      exponentially with the back gate voltage. At a back gate
                      voltage of 8 V. the on-current was enhanced by a factor of
                      1.6. The back gate also improves the on/off current ratio.
                      Low temperature measurements show a slightly temperature
                      dependent S. characteristic for a tunneling dominated
                      device. (c) 2012 Elsevier Ltd. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000305728600017},
      doi          = {10.1016/j.sse.2012.04.018},
      url          = {https://juser.fz-juelich.de/record/111885},
}