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| Hauptseite > Publikationsdatenbank > Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source > print |
| Hauptseite > Publikationsdatenbank > Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source > print |
| 001 | 111885 | ||
| 005 | 20180211171859.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.sse.2012.04.018 |
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| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Zhao, Q.T. |b 0 |u FZJ |0 P:(DE-Juel1)VDB97138 |
| 245 | _ | _ | |a Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source |
| 260 | _ | _ | |a Oxford [u.a.] |b Pergamon, Elsevier Science |c 2012 |
| 300 | _ | _ | |a 97-101 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Solid-State Electronics |x 0038-1101 |0 6634 |y S1 |v 74 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a This work was financially supported by the EU project STEEPER. |
| 520 | _ | _ | |a We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0 5 source. The device shows good performance with an average subthreshold swing S of 80 mV/dec over a drain current range of more than 3 orders of magnitude. We observed that the on-current increases exponentially with the back gate voltage. At a back gate voltage of 8 V. the on-current was enhanced by a factor of 1.6. The back gate also improves the on/off current ratio. Low temperature measurements show a slightly temperature dependent S. characteristic for a tunneling dominated device. (c) 2012 Elsevier Ltd. All rights reserved. |
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| 653 | 2 | 0 | |2 Author |a Tunnel FET |
| 653 | 2 | 0 | |2 Author |a Strained Si |
| 653 | 2 | 0 | |2 Author |a Subthreshold swing |
| 653 | 2 | 0 | |2 Author |a SiGe |
| 700 | 1 | _ | |a Yu, W.J. |b 1 |u FZJ |0 P:(DE-Juel1)VDB101969 |
| 700 | 1 | _ | |a Zhang, B. |b 2 |u FZJ |0 P:(DE-Juel1)VDB83419 |
| 700 | 1 | _ | |a Schmidt, M. |b 3 |u FZJ |0 P:(DE-Juel1)VDB8227 |
| 700 | 1 | _ | |a Richter, S. |b 4 |u FZJ |0 P:(DE-Juel1)VDB64182 |
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| 700 | 1 | _ | |a Fox, A. |b 8 |u FZJ |0 P:(DE-Juel1)VDB61237 |
| 700 | 1 | _ | |a Bourdelle, K.K. |b 9 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Mantl, S. |b 10 |u FZJ |0 P:(DE-Juel1)VDB4959 |
| 773 | _ | _ | |0 PERI:(DE-600)2012825-3 |a 10.1016/j.sse.2012.04.018 |g Vol. 74, p. 97-101 |p 97-101 |q 74<97-101 |t Solid state electronics |v 74 |x 0038-1101 |y 2012 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.sse.2012.04.018 |
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