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@ARTICLE{Knoll:111886,
      author       = {Knoll, L. and Zhao, Q.T. and Lupták, R. and Trellenkamp,
                      S. and Bourdelle, K.K. and Mantl, S.},
      title        = {20 nm {G}ate length {S}chottky {MOSFET}s with ultra-thin
                      {N}i{S}i/epitaxial {N}i{S}i2 source/drain},
      journal      = {Solid state electronics},
      volume       = {71},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {PreJuSER-111886},
      pages        = {88 - 92},
      year         = {2012},
      note         = {Record converted from VDB: 16.11.2012},
      abstract     = {Schottky barrier (SB)-MOSFETs with NiSi and epitaxial NiSi2
                      S/D contacts with gate lengths as small as 20 nm are
                      presented. Epitaxial NiSi2 FETs show higher on-currents than
                      corresponding NiSi devices due to its lower SB height. A
                      striking observation is that tunnelling currents through the
                      fairly large SB decrease at very short gate lengths in
                      SB-MOSFETs, in contrast to the scaling behavior of
                      conventional MOSFETs. Simulations indicate that the
                      potential in the channel increases due to overlap of the
                      high source and drain barriers with decreasing gate length,
                      leading to lower currents. Boron implantation into the
                      silicide (IIS) was used to lower the SBH. Devices with
                      epitaxial NiSi2 show an improved performance after barrier
                      lowering by (IIS). It is shown, that the parasitic potential
                      increase of the two S/D Schottky barriers can be either
                      minimized by IIS and by enhanced gate control due to EOT
                      scaling using high-k as the gate oxide. (C) 2011 Elsevier
                      Ltd. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000303033800017},
      doi          = {10.1016/j.sse.2011.10.026},
      url          = {https://juser.fz-juelich.de/record/111886},
}