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@INPROCEEDINGS{HoffmannEifert:111894,
      author       = {Hoffmann-Eifert, S. and Reiners, M. and Aslam, N. and
                      Kärkkänen, I. and Kim, J.H. and Waser, R.},
      title        = {{A}tomic layer deposition of transition metal oxide thin
                      fiilms for resistive memory applications},
      reportid     = {PreJuSER-111894},
      year         = {2012},
      note         = {Record converted from VDB: 16.11.2012},
      comment      = {Nature Conference on Frontiers in Electronic Materials:
                      Correlation Effects and Memristive Phenomena},
      booktitle     = {Nature Conference on Frontiers in
                       Electronic Materials: Correlation
                       Effects and Memristive Phenomena},
      month         = {Jun},
      date          = {2012-06-17},
      organization  = {Aachen, 17 Jun 2012},
      subtyp        = {Invited},
      cin          = {JARA-FIT / PGI-7},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/111894},
}